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UTT4850G-S08-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTT4850G-S08-R
功能描述  N-CHANNEL POWER MOSFET
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTT4850G-S08-R 数据表(HTML) 2 Page - Unisonic Technologies

  UTT4850G-S08-R Datasheet HTML 1Page - Unisonic Technologies UTT4850G-S08-R Datasheet HTML 2Page - Unisonic Technologies UTT4850G-S08-R Datasheet HTML 3Page - Unisonic Technologies UTT4850G-S08-R Datasheet HTML 4Page - Unisonic Technologies  
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UTT4850
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R209-032.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(TJ=175°C) (Note 1)
TA=25°C
ID
6.0
A
TA=70°C
5.0
A
Pulsed Drain Current
IDM
24
A
Avalanche Current
IAS
6
A
Repetitive Avalanche Energy
EAS
120
mJ
Power Dissipation (Note 1)
TA=25°C
PD
1.7
W
TA=70°C
1.2
W
Junction Temperature
TJ
-50~+150
°C
Storage Temperature Range
TSTG
-50~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=6.66mH, IAS=6A, VDD= 50V, RG=25Ω, Starting TJ=25°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
(Note)
θJA
75
°C/W
Note: Surface Mounted on 1” x 1” FR4 Board.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
60
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1
µA
VDS=60V, VGS=0V, TJ=55°C
20
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100
nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
2.5
V
On State Drain Current (Note 1)
ID(ON)
VDS=2V, VGS=10V
40
A
Static Drain-Source On-State Resistance
(Note 1)
RDS(ON)
VGS=10V, ID=6.0A
20
25
mΩ
VGS=4.5V, ID=5.1A
22
31
mΩ
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
CISS
VDS=25V,VGS=0V, f=1.0MHz
2500 2700
pF
Output Capacitance
COSS
185
200
pF
Reverse Transfer Capacitance
CRSS
150
170
pF
Gate Resistance
RG
VGS=0.1V, f=1MHz
0.5
1.4
2.4
Ω
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=30V, ID≈0.5A, VGS=10V,
RG=25Ω
70
90
ns
Rise Time
tR
80
100
ns
Turn-OFF Delay Time
tD(OFF)
750
800
ns
Fall-Time
tF
165
200
ns
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
70
100
nC
Gate to Source Charge
QGS
8
nC
Gate to Drain Charge
QGD
13
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage (Note 1)
VSD
IS=1.7A,VGS=0V
0.8
1.2
V
Notes: 1. Pulse test; pulse width≤300µs, duty cycle≤2%.
2. Guaranteed by design, not subject to production testing.



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