UTT75N03

POWER MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R205-046.B



ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

(Note 4)

75

A

56

A

Pulsed (Note 1)

300

A

Total Power Dissipation

50

W

2

W

Operating Junction Temperature Range

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL RESISTANCE

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (PCB Mount) (Note 3)

62.5

°C/W

Junction to Case

2.5

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

10

µA

Gate-Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Static Drain-Source On-State Resistance

(Note 2)

4

mΩ

7

mΩ

Gate Threshold Voltage

1

3

V

DYNAMIC PARAMETERS

Input Capacitance

3900

pF

Output Capacitance

640

pF

Reverse Transfer Capacitance

510

pF

Gate Resistance

f=1.0MHz

1.5

Ω

SWITCHING PARAMETERS

Turn-ON Delay Time (Note 2)

78

ns

Rise Time

140

ns

Turn-OFF Delay Time

1100

ns

Fall Time

530

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward On Voltage (Note 2)

1.2

V

Notes: 1. Pulse width limited by max. junction temperature

2. Pulse test

3. Surface mounted on 1 in

4. Package limitation current is 75A