UTT40P04L-TND-R datasheet(3/4 Pages) UTC

3 / 4 page

UTT40P04

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-616.E



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-250µA, VGS=0V

-40

Drain-Source Leakage Current

IDSS

VDS=-32V, VGS=0V

-1

µA

Forward

VGS=+20V, VDS=0V

+100

Gate- Source Leakage Current

Reverse

IGSS

VGS=-20V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1

-1.8

-3

VGS=-10V, ID=-12.7A

mΩ

Static Drain-Source On-State Resistance

RDS(ON)

VGS=-4.5V, ID=-10.4A

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

2085 2775

Output Capacitance

COSS

360 480

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=-20V, f=1.0MHz

210

310

Gate Resistance

f=1.0MHz

4.6

Ω

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tD(OFF)

600

Fall-Time

VDD=-20V, ID=-12.7A, RGEN=6Ω,

VGS=-10V

380

VGS=0~-10V, VDD=-20V,

ID=-12.7A

230

Total Gate Charge

VGS=0~-5V, VDD=-20V,

ID=-12.7A

120

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

VDD=-20V, ID=-12.7A

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=-12.7A, VGS=0V (Note 1)

-0.8 -1.2

Body Diode Reverse Recovery Time

tRR

Body Diode Reverse Recovery Charge

QRR

IF=-12.7A, di/dt=100A/µs

µC

Notes: 1. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

2. Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V.

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