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UZ0107G-8-AA3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UZ0107G-8-AA3-R
功能描述  LOGIC LEVEL FOUR-QUADRANT TRIAC
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UZ0107G-8-AA3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UZ0107G-8-AA3-R Datasheet HTML 1Page - Unisonic Technologies UZ0107G-8-AA3-R Datasheet HTML 2Page - Unisonic Technologies UZ0107G-8-AA3-R Datasheet HTML 3Page - Unisonic Technologies  
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UZ0107
Preliminary
TRIAC
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R401-038.b
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Repetitive Peak Off-State Voltage
VDRM
Full Sine Wave, TSP≤103°C
600
V
800
V
Non-Repetitive Peak On-State Current
ITSM
Full Sine Wave, TJ(init)=25°C,
tp=20ms
12.5
A
Full Sine Wave, TJ(init)=25°C,
tp=16.7ms
13.8
A
RMS On-State Current
IT(RMS)
Full Sine Wave, TSP≤103°C
1
A
Peak Gate Current
IGM
1
A
Peak Gate Power
PGM
2
W
Average Gate Power
PG(AV)
Over Any 20ms Period
0.1
W
Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
-40
150
°C
I
2t for Fusing
I
2t
tp=10ms, Sine-Wave Pulse
0.78
A
2s
Rate of Rise Of On-State Current
dIT/dt
IT=1A, IG=20mA,
dIG/dt=100mA/µs, T2+ G+
50
A/µs
IT=1A, IG=20mA,
dIG/dt=100mA/µs, T2+ G-
50
A/µs
IT=1A, IG=20mA,
dIG/dt=100mA/µs, T2- G-
50
A/µs
IT=1A, IG=20mA,
dIG/dt=100mA/µs, T2- G+
20
A/µs
THERMAL DATA
PARAMETER
SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Thermal Resistance from Junction to
Solder Point
θJ-SP
Full Cycle
15
K/W
Thermal Resistance from Junction to
Ambient
θJA
Minimum Footprint, Printed-Circuit
Board Mounted, in Free Air
156
K/W
Pad Area, Printed-Circuit Board
Mounted, in Free Air
70
K/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Gate Trigger Current (TJ=25°C)
IGT
VD=12V, IT=0.1A, T2+ G+
0.3
5
mA
VD=12V, IT=0.1A, T2+ G-
0.3
5
mA
VD=12V, IT=0.1A, T2- G-
0.3
5
mA
VD=12V, IT=0.1A, T2- G+
0.3
7
mA
Latching Current (TJ=25°C)
IL
VD=12V, IG=0.1A, T2+ G+
10
mA
VD=12V, IG=0.1A, T2+ G-
25
mA
VD=12V, IG=0.1A, T2- G-
10
mA
VD=12V, IG=0.1A, T2- G+
10
mA
Holding Current
IH
VD=12V, TJ=25°C
10
mA
On-State Voltage
VT
IT=1A, TJ=25°C
1.3
1.6
V
Gate Trigger Voltage
VGT
VD=12V, IT=0.1A, TJ=25°C
1.3
V
VD=600V, IT=0.1A, TJ=125°C
0.2
V
Off-State Current
ID
VD=600V, TJ=125°C
0.5
mA
Rate of Rise of Off-State Voltage
dVD/dt
VDM=402V, TJ=110°C, Gate Open
Circuit
100
V/µs
Rate of Change of Commutating
Voltage
dVcom/dt
VDM=400V, TJ=110°C,
dIcom/dt=0.44A/ms,
Gate Open Circuit
0.5
V/µs



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