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UTT200N03L-TQ2-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTT200N03L-TQ2-R
功能描述  N-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTT200N03L-TQ2-R 数据表(HTML) 2 Page - Unisonic Technologies

  UTT200N03L-TQ2-R Datasheet HTML 1Page - Unisonic Technologies UTT200N03L-TQ2-R Datasheet HTML 2Page - Unisonic Technologies UTT200N03L-TQ2-R Datasheet HTML 3Page - Unisonic Technologies UTT200N03L-TQ2-R Datasheet HTML 4Page - Unisonic Technologies UTT200N03L-TQ2-R Datasheet HTML 5Page - Unisonic Technologies  
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UTT200N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-758.C
ABSOLUTE MAXIMUM RATINGS [TC=25°C, unless otherwise noted (Note 6)]
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
200
A
Pulsed (Note 1)
IDM
800
A
Single Pulsed Avalanche Energy (Note 2)
EAS
864
mJ
Power Dissipation
TC=25°C
PD
178
W
Power Dissipation
Derate above 25°C
1.43
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
0.7
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V, TC=25°C
30
V
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0V
10
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100
nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.0
3.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=80A
2.6
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
5490 7300
pF
Output Capacitance
COSS
1220 1620
pF
Reverse Transfer Capacitance
CRSS
155 233
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=25V, ID=100A
200 350
nC
Gate to Source Charge
QGS
11
nC
Gate to Drain Charge
QGD
40
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RGEN=4.7Ω,
VGS=10V
70
110
ns
Rise Time
tR
200 300
ns
Turn-OFF Delay Time
tD(OFF)
1600 2000
ns
Fall-Time
tF
700 1200
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
200
A
Maximum Body-Diode Pulsed Current
ISM
800
A
Drain-Source Diode Forward Voltage
VSD
IS=100A, VGS=0V
1.3
V
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
Note: 2. L = 3mH, IAS = 24A, VDD = 30V, RG = 25Ω, Starting TJ = 25°C
3. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
4. Essentially independent of operating temperature



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