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CS3750 数据表(PDF) 2 Page - ON Semiconductor |
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CS3750 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() 2 Electrical Characteristics: 7.5V ≤ V CC ≤ 15V; -40°C ≤ TA ≤ +85°C; unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Note 1: Time required for output signal to rise to 90% of its amplitude after input signal switches. Note 2: Time required for output signal to decrease to 10% of its amplitude after input signal switches. s Output Stage VOUT Saturation Voltage IOUT = 100mA; VIN = 0V 0.25 0.50 V (Low Side) IOUT = 1mA; VIN = 0V 0.01 0.10 V VOUT Offset Voltage VC = 5V; IOUT = -30mA 15 50 mV VOUT Saturation High Side VIN = 5V;IOUT = -100mA VS-2 VS-1.5 VS V Low Side VIN = 0V;IOUT = -1mA 0.02 0.10 V VOUT Differential VC = 5V, IOUT = -100mA 100 mV Matching Voltage Supply Current VIN = VDIR = 0; 23 45 mA s Input Stage VIN LOW VIN decreasing; VDIR = 0V 0.8 1.9 V HIGH VIN increasing; VDIR = 0V 2.0 3.5 V Hysteresis VDIR = 0V 100 mV IIN LOW VIN = 0.8V; VDIR = 0V 20 100 µA HIGH VIN = 3.5V 0.4 100.0 µA Output Slew Rate VIN = 250Hz; RLOAD = 150Ω 0.2 0.8 V/us with respect to input Output Turn on Delay VIN = 250Hz; RLOAD = 150Ω, note 1 1.5 6 µs with respect to input Output Turn off Delay VIN = 250Hz; RLOAD = 150Ω, note 2 2.4 9 µs with respect to input s Direction VDIR LOW VIN = 5V; VDIR decreasing 0.8 1.9 V HIGH VIN = 5V; VDIR increasing 2.0 3.5 V Hysteresis VIN = 5V 100 mV IDIR LOW VIN = 0V; VDIR = 0.8V 40 100 µA HIGH VIN = 0V; VDIR = 3.5V 0.4 100 µA Output Slew Rate VIN = 5V; fDIR = 250Hz; C = 0µF 0.2 1.5 V/µs with respect to DIR Output Fall Time VIN = 0V; VDIR = 0V; C = 0µF 0.2 2.0 µs with respect to DIR Output Turn on Delay VIN = 5V; RLOAD = 150Ω with respect to DIR VDIR = 250Hz; C = 0µF, note 1 1 6 µs Output Turn off Delay VIN = 5V; RLOAD = 150Ω with respect to DIR VDIR = 250Hz; C = 0µF, note 2 2.5 9 µs s Protection Functions IOUT Current Limit VIN = 5V 100 225 mA (High Side Only) Over Voltage Threshold VIN = 5V 17.0 21.5 26.0 V Hysteresis 0.5 V Thermal Shutdown 160 °C Hysteresis 20 °C |
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