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1N4607 数据表(PDF) 2 Page - Microsemi Corporation |
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1N4607 数据表(HTML) 2 Page - Microsemi Corporation |
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2 / 4 page ![]() Maximum Ratings Symbol Value Unit Peak Inverse Voltage @ 5µA & 0.1µA @ -55oC PIV 85 (Min). Volts Average Rectified Current Iavg 200 mAmps Continuous Forward Current I Fdc 500 mAmps Peak Surge Current (t peak = 1 sec.) I peak 1.0 Amp BKC Power Dissipation T L=50 oC, L = 3/8" from body P tot 500 mWatts Operating Temperature Range T Op -65 to +150 o C Storage Temperature Range T St -65 to +150 o C Electrical Characteristics @ 25 oC* Symbol Minimum Maximum Unit Forward Voltage Drop @ I F = 400 mA V F *** 1.10 Volts Breakdown Voltage @ I R = 25 µA PIV 85 Volts Reverse Leakage Current @ V R = 50 V I R 100 µA Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features Six sigma quality Metallurgically bonded BKC's Sigma Bond™ plating for problem free solderability Silicon Switching Diode DO-35 Glass Package 1N4150 1N4608 Note 1: Per Method 4031-A with I F = 10 mA,Vr = 6 V, R L = 100 Ohms. * UNLESS OTHERWISE SPECIFIED Reverse Recovery time (note 1) t rr 10 nSecs DO-35 Glass Package Dia. 0.06-0.09" 1.0" 25.4 mm (Min.) Length 0.120-.200" 3.05-5.08- m m 1.53-2.28m m 0 .0 18-0 .0 22" 0 .458-0 .558m m L ea dDi a . 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 |
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