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1N3822ATR 数据表(PDF) 2 Page - Microsemi Corporation

部件名 1N3822ATR
功能描述  SILICON 1 WATT ZENER DIODES
PDF  3 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

1N3822ATR 数据表(HTML) 2 Page - Microsemi Corporation

  1N3822ATR Datasheet HTML 1Page - Microsemi Corporation 1N3822ATR Datasheet HTML 2Page - Microsemi Corporation 1N3822ATR Datasheet HTML 3Page - Microsemi Corporation  
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1 Watt Metal Case Zener Diodes
SCOTTSD A L E DIVISION
1N3821 thru 1N3830A
*ELECTRICAL CHARACTERISTICS @ 25oC
MAXIMUM ZENER IMPEDANCE
(Note 2)
NOMINAL
ZENER
VOLTAGE
VZ @ IZT
(Note 1)
ZENER
TEST
CURRENT
IZT
ZZT @ IZT
ZZK @ IZK = 1mA
MAXIMUM
ZENER
CURRENT
IZM
(Note 3)
MAXIMUM
REVERSE
LEAKAGE
CURRENT
IR
@
VR
TYPICAL
TEMP. COEFF.
OF ZENER
VOLTAGE
αVZ
JEDEC
TYPE
NUMBER
Volts
mA
OHMS
OHMS
mA
µA
Volts
%/
oC
1N3821
1N3821A
1N3822
1N3822A
3.3
3.3
3.6
3.6
76
76
69
69
10
10
10
10
400
400
400
400
276
276
252
252
100
100
100
100
1
1
1
1
-.066
-.066
-.058
-.058
1N3823
1N3823A
1N3824
1N3824A
3.9
3.9
4.3
4.3
64
64
58
58
9
9
9
9
400
400
400
400
238
238
213
213
50
50
10
10
1
1
1
1
-.046
-.046
-.033
-.033
1N3825
1N3825A
1N3826
1N3826A
4.7
4.7
5.1
5.1
53
53
49
49
8
8
7
7
500
500
550
550
194
194
178
178
10
10
10
10
1
1
1
1
-.015
-.015
+/-.010
+/-.010
1N3827
1N3827A
1N3828
1N3828A
5.6
5.6
6.2
6.2
45
45
41
41
5
5
2
2
600
600
700
700
162
162
146
146
10
10
10
10
2
2
3
3
+.030
+.030
+.049
+.049
1N3829
1N3829A
1N3830
1N3830A
6.8
6.8
7.5
7.5
37
37
34
34
1.5
1.5
1.5
1.5
500
500
250
250
133
133
121
121
10
10
10
10
3
3
3
3
+.053
+.053
+.057
+.057
*JEDEC Registered Data.
NOTES: 1.
The JEDEC type numbers shown with suffix A have a standard tolerance of +/-5% on the nominal zener voltage. VZ measured
with device in thermal equilibrium in 25
oC still air and mounted in test clips, ¾” from unit body. if tighter tolerance on VZ is required,
consult factory.
2.
The zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (IZT or IZK) is
superimposed on IZT or IZK. Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve and to
eliminate unstable units. See MicroNote 202 for variation in dynamic impedance with different zener currents.
3.
Allowance has been made for the increase in
VZ due to ZZ and for the increase in junction temperature as the unit approaches
thermal equilibrium at the power dissipation of 1 watt.
GRAPHS
TL
TA
TL – Lead Temperature (
oC) 3/8” from body
FIGURE 2
or TA on FR4 PC Board
Temperature Coeff. vs. Zener Voltage
FIGURE 1
Power Derating
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
 2003
11-06-2003 REV A



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