I

High

I

High

Substrate

Mirror

In

I

Low

I

Low

Mirror

Out

Mirror

Common

1

2

1

2

8

7

6

5

1

2

3

4

100µA

100µA

REF200

www.ti.com

SBVS020B – SEPTEMBER 2000 – REVISED JULY 2015

7 Detailed Description

7.1 Overview

The REF200 device combines three circuit building-blocks on a single monolithic chip—two 100-µA current

sources and a current mirror. The sections are dielectrically isolated, making them completely independent. Also,

because the current sources are two terminal devices, they can be used equally well as current sinks. The

performance of each section is individually measured and laser-trimmed to achieve high accuracy at low cost.

7.2 Functional Block Diagram

7.3 Feature Description

7.3.1 Temperature Drift

Drift performance is specified by the box method, as illustrated in Figure 1. The upper and lower current

extremes measured over temperature define the top and bottom of the box. The sides are determined by the

specified temperature range of the device. The drift of the unit is the slope of the diagonal, typically 25 ppm/°C

from –25°C to +85°C.

Copyright © 2000–2015, Texas Instruments Incorporated

Submit Documentation Feedback

7

Product Folder Links: REF200