A Microsemi Company

580 Pleasant St.

Phone: 617-924-9280

Watertown, MA 02472

Fax:

617-924-1235

DIE SPECIFICATION

60V 300mA

MONOLITHIC DIODE ARRAY

FEATURES:

Symbol

Parameter

Limit

Unit

VBR(R) *1 *2 Reverse Breakdown Voltage

60

Vdc

IO

*1

Continuous Forward Current

300

mAdc

IFSM

*1 Peak Surge Current (tp= 1/120 s)

500

mAdc

Top

Operating Junction Temperature Range

-65 to +150 °C

Tstg

Storage Temperature Range

-65 to +200 °C

NOTE 1: Each Diode

NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%

Symbol Parameter

Conditions

Min

Max

Unit

BV1

Breakdown Voltage

IR = 10uAdc

60

Vf1

Forward Voltage

IF = 100mAdc *1

1

Vdc

Vf2

Forward Voltage

IF = 500mAdc *1

1.5

Vdc

IR1

Reverse Current

VR = 40 Vdc

0.1

uAdc

Ct

Capacitance (pin to pin)

VR = 0 Vdc ; f = 1 MHz

8.0

pF

tfr

Forward Recovery Time

IF = 500mAdc

40

ns

trr

Reverse Recovery Time

IF = IR = 200mAdc, irr = 20 mAdc, RL = 100 ohms

20

ns

NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge

Sertech reserves the right to make changes to any product design, specification or other information at any time without prior

notice.

MSC1025.PDF Rev - 12/3/98

Packaging Options:

W:

Wafer (100% probed)

U: Wafer (sample probed)

D:

Chip (Waffle Pack)

B: Chip (Vial)

V:

Chip (Waffle Pack, 100% visually inspected) X: Other

Metallization Options:

Standard: Al Top

/ Au Backside (No Dash #)

Processing Options:

Standard:

Capable of JANTXV application (No Suffix)

Suffix C:

Commercial

Suffix S:

Capable of S-Level equivalent applications

ORDERING INFORMATION

PART #: 28M0_ _- _

First Suffix Letter: Packaging Option

Second Suffix Letter: Processing Option

Dash #: Metallization Option

Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified

28M0

J

A

C

C

A

J

J

J

J

J

J

J

.061"

.054"

Absolute Maximum Ratings: