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2N5109 数据表(PDF) 2 Page - Microsemi Corporation |
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2N5109 数据表(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page ![]() MSC1304.PDF 10-25-99 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO(sus) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) 20 - - Vdc BVCER(sus) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, RBE = 10 ohms) 40 - - Vdc ICEO Collector Cutoff Current (VCE = 15 Vdc, IB = 0) - - 20 µA IEBO Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) - - 100 µA (on) HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 15.0 Vdc) 5 40 - - - 120 - - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit fT Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) - 1200 - MHz |
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