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MS1226 数据表(PDF) 1 Page - Microsemi Corporation |
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MS1226 数据表(HTML) 1 Page - Microsemi Corporation |
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1 / 3 page ![]() MSC0943.PDF 10-28-98 MS1226 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage 65 V VCEO Collector-emitter Voltage 36 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 4.5 A PDISS Power Dissipation 80 W TJ Junction Temperature +200 °°C TSTG Storage Temperature -65 to +150 °°C Thermal Data Thermal Data RTH(J-C) Junction-case Thermal Resistance 2.2 °°C/W Features Features • 30 MHz • 28 VOLTS • IMD = -28 dB • P OUT = 30 WATTS • G P = 18 dB MINIMUM • COMMON EMITTER CONFIGURATION |
类似零件编号 - MS1226 |
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类似说明 - MS1226 |
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