Microsemi

RF Products Division

140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855

Page 1

Copyright

 2000

MSC

1651.PDF 2001-01-04

MS2176

RF & MICROWAVE TRANSISTORS

R F P R O D UCT S

DI VI SI ON

DESCRIP T ION

DESCRIP T ION

DESCRIP T ION

DESCRIP T ION

The MS2176 is a gold metallized silicon NPN pulse power

transistor. The MS2176 is designed for applications requiring high

peak power and low duty cycles within the frequency range of 400 –

500 MHz.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

21.6

A

Power Dissipation

875

W

Junction Temperature

+200

°C

Storage Temperature

-65 to +150

°C

THERMAL DATA

Junction-Case Thermal Resistance

0.2

°C/W

KEY FEATURE S

KEY FEATURE S

KEY FEATURE S

KEY FEATURE S

350 Watts @ 10µSec

Pulse Width, 10%

Duty Cycle

300 Watts @

250µSec Pulse Width

10% Duty Cycle

9.5 dB Min. Gain

Refractory Gold

Metallization

Emitter Ballasting And

Low Thermal

Resistance For

Reliability and

Ruggedness

Infinite VSWR

Capability At

Specified Operating

Conditions

APPLICATIONS/B

APPLICATIONS/B

APPLICATIONS/B

APPLICATIONS/BENEFITS

ENEFITS

ENEFITS

ENEFITS

UHF Pulsed

Applications

1

4

PIN CONNECTION

2

3

1. Collector

4. Base

2. Base

3. Emitter

.400 X .400 2LFL (M106)

hermetically sealed