Microsemi

RF Products Division

140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855

Page 1

Copyright

 2000

MSC

1665.PDF 2001-01-20

MS2552

RF & MICROWAVE TRANSISTORS

R F P R O D UCT S DI VI SI ON

DESCRI PTION

DESCRI PTION

DESCRI PTION

DESCRI PTION

The MS2552 device is a high power pulsed transistor specifically

designed for DME/TACAN avionics applications.

This device is capable of withstanding an infinite load VSWR at any phase

angle under full rated conditions. Low RF thermal resistance and semi-

automatic bonding techniques ensure high reliability and product

consistency.

The MS2552 is housed in the industry-standard AMPAC

 metal/ceramic

hermetic package with internal input/output matching structures.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

KEY FEATU R ES

KEY FEATU R ES

KEY FEATU R ES

KEY FEATU R ES

Refractory/Gold

Metallization

Emitter Ballasted

Ruggedized VSWR

∞ :1

Capability

Input/Output Matching

Overlay Geometry

Metal/Ceramic Hermetic

Package

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFITS

SS

S

Avionics Applications

Applies only to rated RF amplifier operation

Symbol

Parameter

Value

Unit

°C)

880

W

Device Current*

24

A

Collector-Supply Voltage*

55

V

Junction Temperature (Pulsed RF Operation)

250

°C

Storage Temperature

-65 to +150

°C

THERMAL DATA

Junction-Case Thermal Resistance

0.17

°C/W