MSASC100W45HR datasheet(1/2 Pages) MICROSEMI

部件名	MSASC100W45HR

功能描述	SURFACE MOUNT LOW LEAKAGE SCHOTTKY DIODE

PDF	2 Pages

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制造商	MICROSEMI [Microsemi Corporation]

网页	http://www.microsemi.com

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MSASC100W45H

MSASC100W45HR

Or

1N6791

45 Volts

100 Amps

Features

• Tungsten schottky barrier

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

• Very low thermal resistance

• Available as standard polarity (strap-to-anode, MSASC100W45H) and

reverse polarity (strap-to-cathode: MSASC100W45HR)

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

VRRM

45

Volts

Working Peak Reverse Voltage

VRWM

45

Volts

DC Blocking Voltage

VR

45

Volts

Average Rectified Forward Current, Tc

≤145°C

IF(ave)

100

Amps

derating, forward current, Tc

≥ 145°C

dIF/dT

3.3

Amps/

°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

IFSM

500

Amps

Peak Repetitive Reverse Surge Current, tp= 1

µs, f= 1kHz

IRRM

2

Amp

Junction Temperature Range

Tj

-65 to +175

°C

Storage Temperature Range

Tstg

-65 to +175

°C

Thermal Resistance, Junction to Case:

MSASC100W45H

MSASC100W45HR

θ

JC

0.35

0.5

°C/W

Maximum Ratings @ 25

°C (unless otherwise specified)

Mechanical

Outline

Datasheet# MSC0291A

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

SURFACE MOUNT

LOW LEAKAGE

SCHOTTKY DIODE

类似零件编号 - MSASC100W45HR

制造商	部件名	数据表	功能描述
Microsemi Corporation	MSASC100W100H	47Kb / 2P	LOW LEAKAGE SCHOTTKY DIODE
Microsemi Corporation	MSASC100W100HR	47Kb / 2P	LOW LEAKAGE SCHOTTKY DIODE

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