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MXP1017 数据表(PDF) 1 Page - Microsemi Corporation

部件名 MXP1017
功能描述  Photo SCR
PDF  1 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

MXP1017 数据表(HTML) 1 Page - Microsemi Corporation

  MXP1017 Datasheet HTML 1Page - Microsemi Corporation  
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Products
2830 S. Fairview St.
Santa Ana, CA 92704
PH: 714.979.8220
FAX: 714.557.5989
Data Sheet # MSC1329.PDF
Updated:June 1999
MXP1017
Electrical Characteristics @ 25oC
Features
•
Light Activated Photo SCR
•
Planar PNPN
•
High Voltage
•
Cathode and Gate pads are Aluminum Wire bondable
•
Anode is backside of die
•
Backside Metallization - Gold
•
Die Attach method; eutectic or epoxy
Photo SCR
SYMBOL
CHARACTERISTIC
TYP
UNITS
VDM
Off-State Voltage
550
Volts
VRM
Reverse Voltage
550
Volts
IDM
Off-State Leakage Current
0.2
uAmps
IRM
Reverse Leakage
0.5
uAmps
IGT
Gate Trigger Current
1.3
uAmps
IH
Holding Current
40
uAmps
tON
Turn-On Time
5
useconds


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