MXP3003 datasheet(1/1 Pages) MICROSEMI

部件名	MXP3003

功能描述	GaAs PIN Photodiode Chips

PDF	1 Pages

Scroll/Zoom	100%

制造商	MICROSEMI [Microsemi Corporation]

网页	http://www.microsemi.com

标志

1 / 1 page

Microsemi

Opto Electronics Products Group

2830 S. Fairview Street, Santa Ana, CA 92704, (714) 979-8220 Fax (714)966-5256

http://www.microsemi.com/opto

Page 1

Copyright

 2000

MSC1592.PDF 2000-10-16

MXP3000 Series

GaAs PIN Photodiode Chips

PRODUCT PREVIEW

O PT O E LE CT RON I C P RO DUC TS

DESCRIP T ION

Microsemi’s GaAs PIN

Photodiode chips are ideal for wide

bandwidth 850nm optical

networking applications.

The five devices offered feature

excellent dark current ratings of 1-3

nA, and a breakdown voltage of 20

Volts with the bandwidth options for

1.4 GHz (active area of 250 mm

2),

1.75 GHz(active area of 200 mm

2), 5

GHz (active area of 100 mm

2), 7 GHz

(active area of 60 mm

2), and 8.75

GHz (active area of 30 mm

2),

The MXP3000 series of

photodiodes are originally offered in

die form for manufacturers of

photodiode modules, supervisory

pump laser circuits, and combination

PIN Photodiode-transimpedance

amplifier hybrids.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

KEY FEATURE S

!"Low Dark Current

!"Extremely low capacitance

!"Wide bandwidth

!"Fast response time

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFITS

SS

S

!"850nm Fiber Optic

Applications

Part Ratings and Characteristics

Item

Sym

MXP3001

MXP3002

MXP3003

MXP3004

MXP3005

Unit

Test Condition

Active Area(Dia.)

—

30

60

100

200

250

mm2

—

Photo Sensitive Area

0.0007

0.0028

0.0078

0.0314

0.0491

mm2

Detection Range

—

850

Nm

—

Responsivity

R

0.45

A/W

VR=-5V, l = 850nm

Dark Current

Idark

1

2

3

nA

VR=-5V

Capacitance

C

0.3

0.4

0.6

1.5

2

pF

VR=-5V

Rise/Fall Time

tr/tf

40

50

70

200

250

ps

VR=-5V, @ 850nm

Bandwidth

8.75

7

5

1.75

1.4

GHz

VR=-5V, @ 850nm

Breakdown Voltage

VB

20

IR=10uA

Chip Size

350 x 350

500 x 500

um x um

Bonding Pad Size

40 x 100

100

um x um

类似零件编号 - MXP3003

制造商	部件名	数据表	功能描述
Littelfuse	MXP310	619Kb / 14P	POLYSWITCH RESETTABLE DEVICES Strap Battery Devices 2016
	MXP370BD	139Kb / 2P	PolySwitch PTC Devices
	MXP370BD	619Kb / 14P	POLYSWITCH RESETTABLE DEVICES Strap Battery Devices 2016

More results

类似说明 - MXP3003

制造商	部件名	数据表	功能描述
Hamamatsu Corporation	G8522	103Kb / 2P	GaAs PIN photodiode
Hamamatsu Corporation	G8921-01	115Kb / 2P	GaAs PIN photodiode array
Microsemi Corporation	MXP4000	172Kb / 1P	InGaAs/InP PIN Photodiode Chips
Optoway Technology Inc	PD-8500	76Kb / 2P	GaAs PIN PD MODULES GaAs PIN PHOTODIODE WITH RECEPTACLE
Hamamatsu Corporation	G8921-01	124Kb / 2P	GaAs PIN photodiode array
	G9287-14	235Kb / 2P	GaAs PIN photodiode with preamp
	G9842	88Kb / 2P	GaAs PIN photodiode with preamp
	G9843	94Kb / 2P	GaAs PIN photodiode with preamp
	G10447-51	128Kb / 2P	GaAs PIN photodiode with preamp
M/A-COM Technology Solu...	MA4GP022-277	338Kb / 6P	GaAs PIN Diode Chips