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BUT11AF 数据表(PDF) 1 Page - ON Semiconductor |
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BUT11AF 数据表(HTML) 1 Page - ON Semiconductor |
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1 / 8 page ![]() FULL PAKt High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capability and low saturation voltage. • 1000 Volt V CES Rating • Low Base Drive Requirements • Isolated Overmold Package • Improved System Efficiency • No Isolating Washers Required • Reduced System Cost • High Isolation Voltage Capability (4500 V RMS) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO(sus) 450 Vdc Collector–Emitter Breakdown Voltage VCES 1000 Vdc Emitter–Base Voltage VEBO 9.0 Vdc RMS Isolation Voltage (For 1 sec, Per Figure 7 VISOL1 4500 TA = 25°C, Rel. Humidity < 30%) Per Figure 8 VISOL2 3500 V Per Figure 9 VISOL3 2500 Collector Current — Continuous Collector Current — Pulsed (1) IC ICM 5.0 10 Adc Base Current — Continuous Base Current — Pulsed (1) IB IBM 2.0 4.0 Adc Total Power Dissipation @ TC = 25°C* Derated above 25 °C PD 40 0.32 Watts W/ °C Operating and Storage Temperature Range TJ, Tstg – 65 to +150 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case* RθJC 3.125 °C/W Maximum Lead Temperature for soldering purposes 1/8 ″ from case for 5 sec. TL 260 °C (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. *Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink, thermal grease applied, and a mounting torque of 6 to 8 in . lbs. ON Semiconductort © Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 4 1 Publication Order Number: BUT11AF/D BUT11AF POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS CASE 221D–02 TO–220 TYPE |
类似零件编号 - BUT11AF |
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类似说明 - BUT11AF |
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