NTS1545EMFST3G datasheet(2/5 Pages) ONSEMI

2 / 5 page

NTS1545EMFS, NRVTS1545EMFS

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

Average Rectified Forward Current

(Rated VR, TC = 165°C)

IF(AV)

Peak Repetitive Forward Current,

(Rated VR, Square Wave, 20 kHz, TC = 164°C)

IFRM

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM

210

Storage Temperature Range

Tstg

−65 to +175

°C

Operating Junction Temperature

−55 to +175

°C

Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)

EAS

100

ESD Rating (Human Body Model)

ESD Rating (Machine Model)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Typ

Max

Unit

Thermal Resistance, Junction−to−Case, Steady State

(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)

RθJC

1.3

−

°C/W

ELECTRICAL CHARACTERISTICS

Instantaneous Forward Voltage (Note 1)

(iF = 5.0 Amps, TJ = 25°C)

(iF = 7.5 Amps, TJ = 25°C)

(iF = 15 Amps, TJ = 25°C)

(iF = 5.0 Amps, TJ = 125°C)

(iF = 7.5 Amps, TJ = 125°C)

(iF = 15 Amps, TJ = 125°C)

0.44

0.46

0.50

0.33

0.36

0.43

−

0.60

−

0.53

Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, TJ = 25°C)

(Rated dc Voltage, TJ = 125°C)

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2.0%.

NTS1545EMFST3G 数据表(PDF) 2 Page - ON Semiconductor

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