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PHT 数据表(PDF) 1 Page - Vishay Siliconix

部件名 PHT
功能描述  High Stability - High Temperature (230 °C) Thin Film Wraparound Chip Resistors, Sulfur Resistant
PDF  6 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

PHT 数据表(HTML) 1 Page - Vishay Siliconix

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PHT
www.vishay.com
Vishay Sfernice
Revision: 14-Jan-15
1
Document Number: 53050
For technical questions, contact: sferthinfilm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Stability - High Temperature (230 °C)
Thin Film Wraparound Chip Resistors, Sulfur Resistant
INTRODUCTION
For applications such as down hole applications, the need
for parts able to withstand very severe conditions
(temperature as high as 215 °C powered or up to 230 °C
un-powered) has leaded Vishay Sfernice to push out the
limit of the thin film technology.
Designers
might
read
the
application
note:
Power
Dissipation
Considerations
in
High
Precision
Vishay
Sfernice
Thin
Film
Chip
Resistors
and
Arrays
(P,
PRA
etc…)
(High
Temperature
Application)
www.vishay.com/doc?53047
in
conjunction
with
this
datasheet to help them to properly design their PCBs and
get the best performances of the PHT.
Vishay Sfernice R&D engineers will be willing to support any
customer design considerations.
FEATURES
• Operating temperature range:
-55 °C; +215 °C
• Storage temperature: -55 °C; +230 °C
• Gold terminations (< 1 μm thick)
• 5 sizes available (0402, 0603, 0805, 1206,
2010); other sizes upon request
• Temperature coefficient down to 15 ppm
(-55 °C; +215 °C)
• Tolerance down to 0.01 %
• Load life stability: 0.35 % max. after 2000 h at 220 °C
(ambient) at Pn
• Shelf life stability: 0.7 % typ. (1 % max.) after 15 000 h at
230 °C
• SMD wraparound
• TCR remains constant after long term storage at 230 °C
(15 000 h)
• Sulfur resistant (per ASTM B809-95 humid vapor test)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Notes
(1) For power handling improvement, please refer to application note 53047: “Power Dissipation Considerations in High Precision Vishay
Sfernice Thin Film Chip Resistors and Arrays (High Temperature Applications)” www.vishay.com/doc?/53047 and consult Vishay Sfernice
(2) See Table 2 on next page
(3) See Table 1 on next page
(4) It is possible to dissipate up to 0.3 W, but there will be an additional drift of 0.1 % after load life
Note
• For other terminations, please consult
STANDARD ELECTRICAL SPECIFICATIONS
MODEL
SIZE
RESISTANCE
RANGE
RATED POWER (1)(2)
P215 °C
W
LIMITING ELEMENT
VOLTAGE
V
TOLERANCE (2)
± %
TEMPERATURE
COEFFICIENT (3)
± ppm/°C
PHT0402
0402
10 to 130K
0.0189
50
0.01, 0.02, 0.05, 0.1, 0.5, 1
10, 15, 25, 30, 50, 55
PHT0603
0603
10 to 320K
0.0375
75
0.01, 0.02, 0.05, 0.1, 0.5, 1
10, 15, 25, 30, 50, 55
PHT0805
0805
10 to 720K
0.06
150
0.01, 0.02, 0.05, 0.1, 0.5, 1
10, 15, 25, 30, 50, 55
PHT1206
1206
10 to 2.7M
0.1
200
0.01, 0.02, 0.05, 0.1, 0.5, 1
10, 15, 25, 30, 50, 55
PHT2010
2010
10 to 7.5M
0.2 (4)
300
0.01, 0.02, 0.05, 0.1, 0.5, 1
10, 15, 25, 30, 50, 55
CLIMATIC SPECIFICATIONS
Operating temperature range
-55 °C; +215 °C
Storage temperature range
-55 °C; +230 °C
PERFORMANCE VS. HUMID SULFUR VAPOR
Test conditions
50 °C ± 2 °C, 85 % ± 4 % RH,
exposure time 500 h
Test results
Resistance drift < (0.05 % R + 0.05
),
no corrosion products observed
MECHANICAL SPECIFICATIONS
Substrate
Alumina
Resistive Element
Nichrome (NiCr)
Passivation
Silicon nitride (Si3N4)
Protection
Epoxy + silicone
Terminations
Gold (< 1 μm) over nickel barrier


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