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PHT 数据表(PDF) 1 Page - Vishay Siliconix |
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PHT 数据表(HTML) 1 Page - Vishay Siliconix |
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1 / 6 page ![]() PHT www.vishay.com Vishay Sfernice Revision: 14-Jan-15 1 Document Number: 53050 For technical questions, contact: sferthinfilm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Stability - High Temperature (230 °C) Thin Film Wraparound Chip Resistors, Sulfur Resistant INTRODUCTION For applications such as down hole applications, the need for parts able to withstand very severe conditions (temperature as high as 215 °C powered or up to 230 °C un-powered) has leaded Vishay Sfernice to push out the limit of the thin film technology. Designers might read the application note: Power Dissipation Considerations in High Precision Vishay Sfernice Thin Film Chip Resistors and Arrays (P, PRA etc…) (High Temperature Application) www.vishay.com/doc?53047 in conjunction with this datasheet to help them to properly design their PCBs and get the best performances of the PHT. Vishay Sfernice R&D engineers will be willing to support any customer design considerations. FEATURES • Operating temperature range: -55 °C; +215 °C • Storage temperature: -55 °C; +230 °C • Gold terminations (< 1 μm thick) • 5 sizes available (0402, 0603, 0805, 1206, 2010); other sizes upon request • Temperature coefficient down to 15 ppm (-55 °C; +215 °C) • Tolerance down to 0.01 % • Load life stability: 0.35 % max. after 2000 h at 220 °C (ambient) at Pn • Shelf life stability: 0.7 % typ. (1 % max.) after 15 000 h at 230 °C • SMD wraparound • TCR remains constant after long term storage at 230 °C (15 000 h) • Sulfur resistant (per ASTM B809-95 humid vapor test) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Notes (1) For power handling improvement, please refer to application note 53047: “Power Dissipation Considerations in High Precision Vishay Sfernice Thin Film Chip Resistors and Arrays (High Temperature Applications)” www.vishay.com/doc?/53047 and consult Vishay Sfernice (2) See Table 2 on next page (3) See Table 1 on next page (4) It is possible to dissipate up to 0.3 W, but there will be an additional drift of 0.1 % after load life Note • For other terminations, please consult STANDARD ELECTRICAL SPECIFICATIONS MODEL SIZE RESISTANCE RANGE RATED POWER (1)(2) P215 °C W LIMITING ELEMENT VOLTAGE V TOLERANCE (2) ± % TEMPERATURE COEFFICIENT (3) ± ppm/°C PHT0402 0402 10 to 130K 0.0189 50 0.01, 0.02, 0.05, 0.1, 0.5, 1 10, 15, 25, 30, 50, 55 PHT0603 0603 10 to 320K 0.0375 75 0.01, 0.02, 0.05, 0.1, 0.5, 1 10, 15, 25, 30, 50, 55 PHT0805 0805 10 to 720K 0.06 150 0.01, 0.02, 0.05, 0.1, 0.5, 1 10, 15, 25, 30, 50, 55 PHT1206 1206 10 to 2.7M 0.1 200 0.01, 0.02, 0.05, 0.1, 0.5, 1 10, 15, 25, 30, 50, 55 PHT2010 2010 10 to 7.5M 0.2 (4) 300 0.01, 0.02, 0.05, 0.1, 0.5, 1 10, 15, 25, 30, 50, 55 CLIMATIC SPECIFICATIONS Operating temperature range -55 °C; +215 °C Storage temperature range -55 °C; +230 °C PERFORMANCE VS. HUMID SULFUR VAPOR Test conditions 50 °C ± 2 °C, 85 % ± 4 % RH, exposure time 500 h Test results Resistance drift < (0.05 % R + 0.05 ), no corrosion products observed MECHANICAL SPECIFICATIONS Substrate Alumina Resistive Element Nichrome (NiCr) Passivation Silicon nitride (Si3N4) Protection Epoxy + silicone Terminations Gold (< 1 μm) over nickel barrier |
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类似说明 - PHT |
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