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ACE4884 数据表(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE4884 数据表(HTML) 3 Page - ACE Technology Co., LTD. |
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3 / 7 page ![]() ACE4884 N-Channel Enhancement Mode MOSFET VER 1.1 3 Electrical Characteristics TA=25℃, unless otherwise noted. Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 40 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.5 1.0 Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=40V,VGS=0V 1 uA VDS=40V,VGS=0V 10 On-State Drain Current ID(on) VDS= 5V,VGS =4.5V 10 A Drain-Source On-Resistance RDS(on) VGS= 10V,ID=10A 0.014 0.020 Ω VGS=4.5V,ID= 8A 0.017 0.024 VGS=2.5V,ID= 6A 0.024 0.030 Forward Transconductance gfs VDS=15V,ID=6.2A 13 S Diode Forward Voltage VSD IS=2.3A,VGS =0V 0.8 1.2 V Dynamic Total Gate Charge Qg VDS=20V,VGS=4.5 V ID= 5A 10 14 nC Gate-Source Charge Qgs 2.8 Gate-Drain Charge Qgd 3.2 Input Capacitance Ciss VDS=20V,VGS=0V f=1MHz 850 pF Output Capacitance Coss 110 Reverse Transfer Capacitance Crss 75 Turn-On Time td(on) VDD=20V,RL=4 Ω ID ≡5.0A,VGEN=10V RG=1 Ω 6 12 nS tr 10 20 Turn-Off Time td(off) 20 36 tf 6 12 |
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