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ACE7402M 数据表(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE7402M 数据表(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 7 page  ACE7402M N-Channel 30-V MOSFET VER 1.1 1 Description The ACE7402M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications. Features • Low r DS(on) trench technology • Low thermal impedance • Fast switching speed Applications • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current a TA=25 OC ID 20 A TA=70 OC 16 Pulse Drain Current b IDM 50 Continuous Drain Current (Diode Continuous) a IS 6.4 A Power Dissipation a TA=25 OC PD 5 W TA=70 OC 3.2 Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 OC Parameter Symbol Maximum Units Maximum Junction-to-Ambient a t≦10sec RθJA 25 ℃/W Steady State 65 ℃/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature |
类似零件编号 - ACE7402M |
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类似说明 - ACE7402M |
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