ACE7436M

N-Channel 30-V MOSFET

VER 1.1

3

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Gate Source Threshold Voltage

1

V

Gate Body Leakage

±100

nA

Zero Gate Voltage Drain Current

1

uA

10

On-State Drain-Current

a

40

A

Static Drain-Source On-Resistance

a

4.6

m

Ω

5.5

Forward Transconductance

a

12

S

Diode Forward Voltage

a

0.76

V

Dynamic

b

Total Gate Charge

35

nC

Gate-Source Charge

13

Gate-Drain Charge

13

Turn-On Delay Time

Ω

Ω,

11

ns

Rise Time

16

Turn-Off Delay Time

76

Fall Time

27

Input Capacitance

f=1MHz

3876

pF

Output Capacitance

410

Reverse Transfer Capacitance

339

Note:

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production testing

.