NCE0108AS

Pb Free Product

http://www.ncepower.com

Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

2

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

100

110

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

1.3

1.8

2.5

V

Drain-Source On-State Resistance

-

22

28

mΩ

Forward Transconductance

20

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

2000

-

PF

Output Capacitance

-

300

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

250

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

12

-

nS

Turn-on Rise Time

-

10

-

nS

Turn-Off Delay Time

-

19

-

nS

Turn-Off Fall Time

-

8

-

nS

Total Gate Charge

-

42

-

nC

Gate-Source Charge

-

9

-

nC

Gate-Drain Charge

-

10

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

0.85

1.2

V

Diode Forward Current

(Note 2)

-

-

8

A

Reverse Recovery Time

-

30

nS

Reverse Recovery Charge

Qrr

di/dt = 100A/μs

(Note3)

-

44

nC

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production