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MMDF2C01HDR2 数据表(PDF) 2 Page - ON Semiconductor

部件名 MMDF2C01HDR2
功能描述  Complementary SO??, Dual Power MOSFET
PDF  16 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MMDF2C01HDR2 数据表(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3.)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
V(BR)DSS
(N)
(P)
20
12
Vdc
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 20 Vdc)
(VGS = 0 Vdc, VDS = 12 Vdc)
IDSS
(N)
(P)
1.0
1.0
µAdc
Gate−Body Leakage Current
(VGS = ± 8.0 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
(N)
(P)
0.7
0.7
0.8
1.0
1.1
1.1
Vdc
Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)
(N)
(P)
0.035
0.16
0.045
0.18
Ohm
Drain−to−Source On−Resistance
(VGS = 2.7 Vdc, ID = 2.0 Adc)
(VGS = 2.7 Vdc, ID = 1.0 Adc)
RDS(on)
(N)
(P)
0.043
0.2
0.055
0.22
Ohm
Forward Transconductance
(VDS = 2.5 Adc, ID = 2.0 Adc)
(VDS = 2.5 Adc, ID = 1.0 Adc)
gFS
(N)
(P)
3.0
3.0
6.0
4.75
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
(N)
(P)
425
530
595
740
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
(N)
(P)
270
410
378
570
Transfer Capacitance
)
Crss
(N)
(P)
115
177
230
250
SWITCHING CHARACTERISTICS (Note 5.)
Turn−On Delay Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
td(on)
(N)
(P)
13
21
26
45
ns
Rise Time
(VDD
6.0 Vdc, ID
4.0 Adc,
VGS = 2.7 Vdc,
RG = 2.3 Ω)
tr
(N)
(P)
60
156
120
315
Turn−Off Delay Time
(VDD = 6.0 Vdc, ID = 2.0 Adc,
VGS = 2.7 Vdc,
td(off)
(N)
(P)
20
38
40
75
Fall Time
VGS = 2.7 Vdc,
RG = 6.0 Ω)
tf
(N)
(P)
29
68
58
135
Turn−On Delay Time
(VDS = 6.0 Vdc, ID = 4.0 Adc,
td(on)
(N)
(P)
10
16
20
35
Rise Time
(VDS
6.0 Vdc, ID
4.0 Adc,
VGS = 4.5 Vdc,
RG = 2.3 Ω)
tr
(N)
(P)
42
44
84
90
Turn−Off Delay Time
(VDS = 6.0 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
td(off)
(N)
(P)
24
68
48
135
Fall Time
VGS = 4.5 Vdc,
RG = 6.0 Ω)
tf
(N)
(P)
28
54
56
110
3. Negative signs for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.



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