数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

MMDF2P01HD 数据表(PDF) 2 Page - ON Semiconductor

部件名 MMDF2P01HD
功能描述  P?묬hannel SO??, Dual Power MOSFET
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MMDF2P01HD 数据表(HTML) 2 Page - ON Semiconductor

  MMDF2P01HD Datasheet HTML 1Page - ON Semiconductor MMDF2P01HD Datasheet HTML 2Page - ON Semiconductor MMDF2P01HD Datasheet HTML 3Page - ON Semiconductor MMDF2P01HD Datasheet HTML 4Page - ON Semiconductor MMDF2P01HD Datasheet HTML 5Page - ON Semiconductor MMDF2P01HD Datasheet HTML 6Page - ON Semiconductor MMDF2P01HD Datasheet HTML 7Page - ON Semiconductor MMDF2P01HD Datasheet HTML 8Page - ON Semiconductor MMDF2P01HD Datasheet HTML 9Page - ON Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 12 page
background image
MMDF2P01HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 3.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
12
−
−
17
−
−
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
−
−
1.0
10
µAdc
Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
IGSS
−
−
100
nAdc
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
0.7
−
1.0
3.0
1.1
−
Vdc
mV/
°C
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 2.0 Adc)
(VGS = 2.7 Vdc, ID = 1.0 Adc)
RDS(on)
−
−
0.16
0.2
0.180
0.220
Ohm
Forward Transconductance (VDS = 2.5 Vdc, ID = 1.0 Adc)
gFS
3.0
4.75
−
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
10 Vd
V
0Vd
Ciss
−
530
740
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
−
410
570
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
−
177
250
SWITCHING CHARACTERISTICS (Note 5.)
Turn−On Delay Time
td(on)
−
21
45
ns
Rise Time
(VDD = 6.0 Vdc, ID = 2.0 Adc,
VGS =27Vdc
tr
−
156
315
Turn−Off Delay Time
VGS = 2.7 Vdc,
RG = 6.0 Ω)
td(off)
−
38
75
Fall Time
RG 6.0 Ω)
tf
−
68
135
Turn−On Delay Time
td(on)
−
16
35
Rise Time
(VDS = 6.0 Vdc, ID = 2.0 Adc,
VGS =45Vdc
tr
−
44
90
Turn−Off Delay Time
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(off)
−
68
135
Fall Time
RG 6.0 Ω)
tf
−
54
110
Gate Charge
QT
−
9.3
13
nC
(VDS = 10 Vdc, ID = 2.0 Adc,
Q1
−
0.8
−
(VDS
10 Vdc, ID
2.0 Adc,
VGS = 4.5 Vdc)
Q2
−
4.0
−
Q3
−
3.0
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 4.)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
−
−
1.69
1.2
2.0
−
Vdc
Reverse Recovery Time
t
48
ns
Reverse Recovery Time
trr
−
48
−
ns
(IS = 2.0 Adc, VGS = 0 Vdc,
ta
−
23
−
(IS
2.0 Adc, VGS
0 Vdc,
dIS/dt = 100 A/µs)
tb
−
25
−
Reverse Recovery Stored Charge
QRR
−
0.05
−
µC
3. Negative sign for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com