MMBT3906 datasheet(2/5 Pages) DIOTECH

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MMBT3906

PNP GENERAL PURPOSE SWITCHING TRANSISTOR

Voltage - -40 Volts

Power Dissipation - 300 mWatt

●

ELECTRICAL CHARACTERISTICS (Ta= 25℃)

OFF CHARACTERISTICS

Symbol

Min.

Typ.

Max.

Unit

(IC = –1.0 mAdc, IB= 0)

–40

–

VBR(CBO)

(IC = –10 μAdc, IE = 0)

–40

–

Emitter–Base Breakdown Voltage

VBR(EBO)

(IE = –10 μAdc, IC = 0)

–5

–

ICEX

( V CE = –30 Vdc, VEB =– 3.0Vdc)

–

–50

Base Cutoff Current

IBL

(V CE = –30 Vdc, VEB = –3.0Vdc)

–

–50

ON CHARACTERISTICS (Note 1.)

hFE

(IC = –0.1 mAdc, VCE = – 1.0 Vdc)

–

(IC = –1.0 mAdc, VCE = – 1.0 Vdc)

–

(IC = –10 mAdc, VCE = – 1.0 Vdc)

100

–

300

(IC = –50 mAdc, VCE = – 1.0 Vdc)

–

(IC = –100 mAdc, VCE = – 1.0 Vdc)

–

(IC = –10 mAdc, IB = –1.0 mAdc)

–

–0.25

(IC = –50mAdc, IB = – 5.0 mAdc)

–

–0.4

(IC = –10 mAdc, IB = –1.0 mAdc)

–0.65

–

–0.85

(IC = –50mAdc, IB = – 5.0 mAdc)

–

–0.95

SMALL–SIGNAL CHARACTERISTICS

Symbol

Min.

Typ.

Max.

Unit

MHz

(IC = –10mAdc, VCE= –20Vdc, f = 100MHz)

250

–

Cobo

(V CB = –5.0 Vdc, IE = 0, f = 1.0 MHz)

–

4.5

Cibo

(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)

–

Input Impedance

hie

(VCE =– 10 Vdc, IC = –1.0mAdc,f=1.0 kHz)

–

Voltage Feedback Ratio

hre

X 10

–4

(VCE = –10 Vdc, IC = –1.0mAdc,f=1.0 kHz)

0.1

–

Small–Signal Current Gain

hfe

(V CE=–10 Vdc, IC =–1.0mAdc,f=1.0 kHz)

100

–

400

Output Admittance

hoe

μmhos

(V CE=–10 Vdc, IC =–1.0mAdc,f =1.0kHz)

–

Noise Figure

(VCE=–5V,IC=–100μA, RS=1.0k ,f=1.0kHz)

–

3. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%.

Collector–Base Breakdown Voltage

Characteristic

Collector–Emitter Breakdown Voltage

VBR(CEO)

Characteristic

Current–Gain — Bandwidth Product

Output Capacitance

Input Capacitance

Collector Cutoff Current

DC Current Gain

Collector–Emitter Saturation Voltage(3)

VCE(sat)

Base–Emitter Saturation Voltage

VBE(sat)

Ω

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