MTSF2P03HD datasheet(3/12 Pages) ONSEMI

3 / 12 page

MTSF2P03HD

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(Cpk

≥ 2.0)

(Notes 2. & 4.)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 24 Vdc, VGS = 0 Vdc)

(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

1.0

µAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

(Cpk

≥ 2.0)

(Notes 2. & 4.)

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.9

3.8

3.0

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance

(Cpk

≥ 2.0)

(Notes 2. & 4.)

(VGS = 10 Vdc, ID = 2.4 Adc)

(VGS = 4.5 Vdc, ID = 1.2 Adc)

RDS(on)

−

110

150

Ω

Forward Transconductance (VDS = 15 Vdc, ID = 1.2 Adc)

(Note 2.)

gFS

2.0

3.1

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

25 Vd

0Vd

Ciss

−

450

−

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

220

−

Transfer Capacitance

f = 1.0 MHz)

Crss

−

SWITCHING CHARACTERISTICS (Note 3.)

Turn−On Delay Time

td(on)

−

Rise Time

(VDS = 15 Vdc, ID = 2.4 Adc,

−

Turn−Off Delay Time

(VDS

15 Vdc, ID

2.4 Adc,

VGS = 10 Vdc, RG = 6.0 Ω) (Note 2.)

td(off)

−

Fall Time

−

Turn−On Delay Time

td(on)

−

Rise Time

(VDD = 15 Vdc, ID = 1.2 Adc,

−

Turn−Off Delay Time

(VDD

15 Vdc, ID

1.2 Adc,

VGS = 4.5 Vdc, RG = 6.0 Ω) (Note 2.)

td(off)

−

Fall Time

−

Gate Charge

−

16.6

(VDS = 24 Vdc, ID = 2.4 Adc,

−

1.6

−

(VDS

24 Vdc, ID

2.4 Adc,

VGS = 10 Vdc) (Note 2.)

−

5.4

−

4.4

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 2.4 Adc, VGS = 0 Vdc) (Note 2.)

(IS = 2.4 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

−

0.9

0.7

1.3

−

Vdc

Reverse Recovery Time

trr

−

(IS = 2.4 Adc, VGS = 0 Vdc,

−

(IS

2.4 Adc, VGS

0 Vdc,

dIS/dt = 100 A/µs) (Note 2.)

−

Reverse Recovery Stored Charge

QRR

−

0.036

−

µC

2. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

4. Reflects typical values.

Cpk =

Max limit − Typ

3 x SIGMA

MTSF2P03HD 数据表(PDF) 3 Page - ON Semiconductor

MTSF2P03HD 数据表(HTML) 3 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载

链接网址

MTSF2P03HD 数据表(PDF) 3 Page - ON Semiconductor

MTSF2P03HD 数据表(HTML) 3 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表 下载

链接网址

数据表下载