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NTMFS4925NET1G 数据表(PDF) 5 Page - ON Semiconductor

部件名 NTMFS4925NET1G
功能描述  Power MOSFET
PDF  7 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NTMFS4925NET1G 数据表(HTML) 5 Page - ON Semiconductor

  NTMFS4925NET1G Datasheet HTML 1Page - ON Semiconductor NTMFS4925NET1G Datasheet HTML 2Page - ON Semiconductor NTMFS4925NET1G Datasheet HTML 3Page - ON Semiconductor NTMFS4925NET1G Datasheet HTML 4Page - ON Semiconductor NTMFS4925NET1G Datasheet HTML 5Page - ON Semiconductor NTMFS4925NET1G Datasheet HTML 6Page - ON Semiconductor NTMFS4925NET1G Datasheet HTML 7Page - ON Semiconductor  
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NTMFS4925NE
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5
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
30
25
20
15
10
5
0
0
200
400
800
1000
1200
1400
1600
22
18
14
12
6
4
2
0
0
1
3
5
6
8
9
11
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
10
1
1
10
100
1000
0.9
0.8
1.0
0.7
0.6
0.5
0.4
0.3
0
5
10
15
20
25
30
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
100
10
1
0.1
0.01
0.01
0.1
1
10
100
1000
150
125
100
75
50
25
0
4
12
16
24
28
40
600
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
810
16
20
2
4
7
10
TJ = 25°C
VGS = 10 V
VDD = 15 V
ID = 30 A
QT
Qgs
Qgd
VGS = 10 V
VDD = 15 V
ID = 15 A
td(off)
td(on)
tf
tr
TJ = 25°C
VGS = 0 V
TJ = 125°C
10 ms
100 ms
1 ms
10 ms
dc
0 V < VGS < 10 V
Single Pulse
TC = 25°C
8
20
32
ID = 26 A
RDS(on) Limit
Thermal Limit
Package Limit
36



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