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5LP01SP 数据表(PDF) 1 Page - ON Semiconductor |
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5LP01SP 数据表(HTML) 1 Page - ON Semiconductor |
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1 / 6 page ![]() 42214 TKIM TC-00003114/91400 TS IM TA-1953 No.6621-1/6 http://onsemi.com Semiconductor Components Industries, LLC, 2014 April, 2014 5LP01SP P-Channel Small Signal MOSFET –50V, –0.07A, 23Ω, Single SPA Features • Low ON-resistance • Ultrahigh-speed switching • 2.5V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions value Unit Drain to Source Voltage VDSS -50 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID -0.07 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% -0.28 A Power Dissipation PD 0.25 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C This product is designed to “ESD immunity < 200V *”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7524-007 Ordering number : EN6621A 3 1 2 Ordering & Package Information Device Package Shipping memo 5LP01SP SPA SC-72 500pcs./bag Pb-Free 5LP01SP-AC SPA SC-72 2,500pcs./box Marking Electrical Connection 12 3 4.0 3.8 3.0 2.2 0.4 0.4 0.4 0.5 1.3 1.3 1 : Source 2 : Drain 3 : Gate SPA XB LOT No. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. |
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