© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 4

1

Publication Order Number:

MTP3055VL/D

MTP3055VL

Preferred Device

Power MOSFET

12 Amps, 60 Volts, Logic

Level

N−Channel TO−220

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected voltage

transients.

Rating

Symbol

Value

Unit

Drain−Source Voltage

60

Vdc

60

Vdc

Gate−Source Voltage

− Continuous

±15

± 20

Vdc

Vpk

Drain Current − Continuous @ 25°C

12

8.0

42

Adc

Apk

Total Power Dissipation @ 25°C

Derate above 25°C

48

0.32

Watts

W/°C

Operating and Storage Temperature

Range

−55 to

175

°C

Single Pulse Drain−to−Source Avalanche

72

mJ

Thermal Resistance

− Junction to Case

− Junction to Ambient

3.13

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10

seconds

260

°C

12 AMPERES

60 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

MTP3055VL

TO−220AB

50 Units/Rail

TO−220AB

CASE 221A

STYLE 5

1

2

3

4

http://onsemi.com

N−Channel

D

S

G

MARKING DIAGRAM

& PIN ASSIGNMENT

MTP3055VL

= Device Code

LL

= Location Code

Y

= Year

WW

= Work Week

MTP3055VL

LLYWW

1

Gate

3

Source

4

Drain

2

Drain