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DNX-PJS 数据表(PDF) 5 Page - DOMINANT Semiconductors |
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DNX-PJS 数据表(HTML) 5 Page - DOMINANT Semiconductors |
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5 / 13 page ![]() Relative Intensity Vs Forward Current Forward Current; mA 0 2 4 6 8 10 0 1 2 3 4 5 6 Forward Current Vs Forward Voltage Forward Voltage; V 1.2 1.4 1.6 1.8 2 2.2 2.4 0 5 10 15 20 25 30 Forward Current Vs Ambient Temperature Ambient Temperature 0 20 40 60 80 100 0 5 10 15 20 25 Relative Intensity Vs Wavelength Wavelength; nm 500 550 600 650 700 750 800 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 5 AllnGaP : DNx-PJS 0.2 70° 90° 80° 0 60° 50° 40° 30° 20° 0.6 0.4 1.0 0.8 10° 0° Radiation Pattern Yellow Orange SuperRed Amber DOMINANT Opto Technologies Innovating Illumination TM Relative Luminous Intensity Vs Forward Current Forward Current, mA 0 10 20 30 40 50 60 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Forward Current Vs Forward Voltage Forward Voltage, V 1.2 1.4 1.6 1.8 2 2.2 2.4 0 5 10 15 20 25 30 35 Maximum Current Vs Temperature Ambient Temperature 0 20 40 60 80 100 0 10 20 30 40 50 Relative Intensity Vs Wavelength Wavelength, nm 500 600 700 800 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Relative Intensity Vs Forward Current Forward Current, mA 0 10 20 30 40 50 60 70 80 0 0.2 0.4 0.6 0.8 1 1.2 Forward Current vs Forward Voltage Forward Voltage; V 1.7 1.8 1.9 2 2.1 2.2 2.3 0 10 20 30 40 50 60 70 Maximum Current Vs Ambient Temperature Ambient Temperature 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 Relative Intensity Vs Wavelength Wavelength; nm 500 550 600 650 700 750 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Yellow Amber Red DOMINANT Semiconductors 30/11/10 Mini DomiLED AlInGaP DNx-PJS - Catalogue-pv2 Page 6 of 9 PRELIMINARY UNDER DEVELOPMENT Engineering reference data are not verified. The specifications are subject to change without notice. Relative intensity vs. forward current. Forward current vs. forward voltage. Radiation pattern. Maximum current vs. temperature. Relative Intensity vs. Wavelength TBD 0.2 70° 90° 80° 0 60° 50° 40° 30° 20° 0.6 0.4 1.0 0.8 10° 0° Intensity vs Current 0.00 0.50 1.00 1.50 2.00 2.50 3.00 0 20 40 60 80 100 If(mA) DOMINANT Semiconductors 30/11/10 Mini DomiLED AlInGaP DNx-PJS - Catalogue-pv2 Page 6 of 9 PRELIMINARY UNDER DEVELOPMENT Engineering reference data are not verified. The specifications are subject to change without notice. Relative intensity vs. forward current. Forward current vs. forward voltage. Radiation pattern. Maximum current vs. temperature. Relative Intensity vs. Wavelength TBD 0.2 70° 90° 80° 0 60° 50° 40° 30° 20° 0.6 0.4 1.0 0.8 10° 0° Intensity vs Current 0.00 0.50 1.00 1.50 2.00 2.50 3.00 0 20 40 60 80 100 If(mA) 06/08/2015V7.0 Allowable Forward Current Vs Duty Ratio ( Ta=25 Deg C, tp≤10uS ) Duty Ratio, % DNx-PJS 10 100 1000 0.1 1 10 100 Duty Ratio, % Allowable Forward Current Vs Duty Ratio ( Ta=25 Deg C, tp 10uS ) Forward Current; mA Forward Current; mA |
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