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P1P3800AG12CRTWG 数据表(PDF) 5 Page - ON Semiconductor

部件名 P1P3800AG12CRTWG
功能描述  Phase Synchronizing Clock Generator
PDF  7 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

P1P3800AG12CRTWG 数据表(HTML) 5 Page - ON Semiconductor

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Table 3. OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VDD
Supply Voltage
3.8
5.5
V
TA
Operating Temperature
−40
+85
°C
CL
Load Capacitance
15
pF
CIN
Input Capacitance
7.0
pF
Table 4. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Rating
Unit
VDD
Voltage on VDD pin with respect to Ground
−0.5 to +7.0
V
VIN
Voltage on any input pin with respect to Ground
−0.5 to +4.0
V
TSTG
Storage Temperature
−65 to +125
°C
Ts
Max. Soldering Temperature (10 sec)
260
°C
TJ
Junction Temperature
150
°C
TDV
Static Discharge Voltage (As per JEDEC STD22−A114−B)
2.0
kV
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
Table 5. DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Min
Typ
Max
Unit
VDD
Operating Voltage
3.8
5.0
5.5
V
VIL
Input Low Voltage (Note 1)
GND − 0.3
0.8
V
VIH
Input High Voltage (Note 1)
1.6
3.0
V
IIL
Input Low Current
10
mA
IIH
Input High Current
10
mA
VOL
Output Low Voltage
IOL = 8 mA
0.4
V
VOH
Output High Voltage
IOH = −8 mA
VDD − 0.6*
V
ICC
Power Down Current (PD# pulled to GND)
1.0
mA
IDD
**Dynamic Supply Current,
PD# = 5.5 V; S[1:4] = 5.5 V/GND; CLKIN Swing = 0 to 5.5 V;
VDD = 5.5 V
1.8
mA
Dynamic Supply Current,
PD# = 3 V; S[1:4] = 3 V/GND; CLKIN Swing = 0 to 3.0 V
3.0
Dynamic Supply Current,
PD# = 3 V; S[1:4] = 1.6 V; CLKIN Swing = 0 to 1.6 V
4.0
Dynamic Supply Current,
PD# = S[1:4] = 1.6 V; CLKIN Swing = 0 to 1.6 V
5.0
*For VDD = 5 V, VOH = VDD − 0.4 V.
**Indicative value, not a recommended operating condition.
1. Parameter is guaranteed by design and characterization. Not tested in production.



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