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SBS818 数据表(PDF) 2 Page - ON Semiconductor

部件名 SBS818
功能描述  Schottky Barrier Diode
PDF  6 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

SBS818 数据表(HTML) 2 Page - ON Semiconductor

  SBS818 Datasheet HTML 1Page - ON Semiconductor SBS818 Datasheet HTML 2Page - ON Semiconductor SBS818 Datasheet HTML 3Page - ON Semiconductor SBS818 Datasheet HTML 4Page - ON Semiconductor SBS818 Datasheet HTML 5Page - ON Semiconductor SBS818 Datasheet HTML 6Page - ON Semiconductor  
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Electrical Characteristics at Ta=25°C (Value per element)
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Reverse Voltage
VR
IR=1mA
30
V
Forward Voltage
VF1IF=1.0A
0.37
0.42
V
VF2IF=1.5A
0.42
0.47
V
VF3IF=2.0A
0.46
0.52
V
Reverse Current
IR
VR=15V
350
μA
Interterminal Capacitance
C
VR=10V, f-1MHz
30
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Thermal Resistance
Rth(j-a)1
When mounted in Cu-foiled area of
900mm2×0.8mm on glass epoxy substrate
100
°C / W
Rth(j-a)2
When mounted on ceramic substrate (900mm2×0.8mm)
65
°C / W
*: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3
and Terminal 5 (or 6).
trr Test Circuit
Ordering Information
Device
Package
Shipping
memo
SBS818-TL-E
EMH8
3,000pcs./reel
Pb Free
Duty
10%
50Ω
100Ω
10Ω
--5V
trr
10μs
Forward Voltage, VF -- V
IF -- VF
Reverse Voltage, VR -- V
IR -- VR
0
0.05
0.15
IT12197
10
0
35
IT12198
0.001
2
3
5
7
2
3
5
0.01
7
2
3
5
0.1
0.50
0.25
0.35
0.45
0.10
0.20
0.30
0.40
1.0E-01
1.0E-02
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+06
1.0E+05
20
15
525
30
Ta=125°C
100
°C
75
°C
50
°C
25
°C
0
°C
--25°C
7
2
3
1.0
SBS818
No. A0471-2/6



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