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SBS818 数据表(PDF) 2 Page - ON Semiconductor |
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SBS818 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() Electrical Characteristics at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage VR IR=1mA 30 V Forward Voltage VF1IF=1.0A 0.37 0.42 V VF2IF=1.5A 0.42 0.47 V VF3IF=2.0A 0.46 0.52 V Reverse Current IR VR=15V 350 μA Interterminal Capacitance C VR=10V, f-1MHz 30 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 10 ns Thermal Resistance Rth(j-a)1 When mounted in Cu-foiled area of 900mm2×0.8mm on glass epoxy substrate 100 °C / W Rth(j-a)2 When mounted on ceramic substrate (900mm2×0.8mm) 65 °C / W *: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3 and Terminal 5 (or 6). trr Test Circuit Ordering Information Device Package Shipping memo SBS818-TL-E EMH8 3,000pcs./reel Pb Free Duty ≤10% 50Ω 100Ω 10Ω --5V trr 10μs Forward Voltage, VF -- V IF -- VF Reverse Voltage, VR -- V IR -- VR 0 0.05 0.15 IT12197 10 0 35 IT12198 0.001 2 3 5 7 2 3 5 0.01 7 2 3 5 0.1 0.50 0.25 0.35 0.45 0.10 0.20 0.30 0.40 1.0E-01 1.0E-02 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+06 1.0E+05 20 15 525 30 Ta=125°C 100 °C 75 °C 50 °C 25 °C 0 °C --25°C 7 2 3 1.0 SBS818 No. A0471-2/6 |
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