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MBR2045EMFST1G 数据表(PDF) 2 Page - ON Semiconductor |
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MBR2045EMFST1G 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() MBR2045EMFS, NRVB2045EMFS http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 130°C) IF(AV) 20 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 120°C) IFRM 40 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 400 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +150 °C Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 150 mJ ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) RθJC − 1.6 °C/W ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 10 A, TJ = 125°C) (iF = 10 A, TJ = 25°C) (iF = 20 A, TJ = 125°C) (iF = 20 A, TJ = 25°C) vF 0.35 0.45 0.43 0.51 0.47 0.56 0.58 0.64 V Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR 48 0.09 100 0.40 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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