Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS

CSC1008 NPN

CSA708

PNP

TO-92

CBE

Low Frequency Amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

80

V

Collector -Emitter Voltage

VCEO

60

V

Emitter -Base Voltage

VEBO

8.0

V

Collector Current

IC

700

mA

Collector Dissipation

PC

800

mW

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

CSC1008

CSA708

UNIT

Collector -Base Voltage

VCBO

IC=100uA.IE=0

>80

>80

V

Collector -Emitter Voltage

VCEO

IC=10mA,IB=0

>60

>60

V

Emitter-Base Voltage

VEBO

IE=100uA, IC=0

>8.0

>8.0

V

Collector-Cut off Current

ICBO

VCB=60V, IE=0

<100

<100

nA

Emitter-Cut off Current

IEBO

VEB=5V, IC=0

<100

<100

nA

DC Current Gain

hFE*

IC=50mA,VCE=2V

40-400

40-240

Collector Emitter Saturation Voltage

VCE(Sat)* IC=500mA,IB=50mA

<0.4

<0.7

V

Base Emitter Saturation Voltage

VBE(Sat) * IC=500mA,IB=50mA

<1.1

<1.1

V

DYNAMIC CHARACTERISTICS

Transition Frequency

ft

IC=50mA, VCE=10V

>30

typ50

MHz

Out-Put Capacitance

Cob

VCB=10V, IE=0

typ8

typ13

pF

f=1MHz

*hFE CLASSIFICATION

CSC1008

R : 40 - 80

O : 70 -140

Y : 120-240

G : 200-400

CSA708

R : 40 - 80

O : 70 -140

Y : 120-240

*Pulse Test: PW=350us, Duty Cycle=2%

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

Data Sheet

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