ZXMS6004FFQ

Document number: DS37132 Rev. 4 - 2

3 of 9

www.diodes.com

January 2016

© Diodes Incorporated

ZXMS6004FFQ

DMN2027USS

Characteristic

Symbol

Value

Units

Continuous Drain-Source Voltage

60

V

Drain-Source Voltage for Short Circuit Protection

36

V

Continuous Input Voltage

-0.5 ... +6

V

Continuous Input Current @-0.2V

No limit

mA

2

A

2.5

A

Continuous Source Current (Body Diode)

1

A

Pulsed Source Current (Body Diode)

5

A

Unclamped Single Pulse Inductive Energy,

90

mJ

Electrostatic Discharge (Human Body Model)

4,000

V

Charged Device Model

1,000

V

Characteristic

Symbol

Value

Units

Linear Derating Factor

0.83

6.66

W

mW/°C

Linear Derating Factor

1.5

12.0

W

mW/°C

Thermal Resistance, Junction to Ambient (Note 6)

150

C/W

Thermal Resistance, Junction to Ambient (Note 7)

83

°C/W

Thermal Resistance, Junction to Case (Note 8)

44

°C/W

Operating Temperature Range

-40 to +150

°C

Storage Temperature Range

-55 to +150

°C

Notes:

6. For a device surface mounted on 15mm x 15mm single sided, 1oz weight copper on 1.6mm FR4 board, in still air conditions.

7. For a device surface mounted on 50mm x 50mm single sided, 2oz weight copper on 1.6mm FR4 board, in still air conditions.

8. Thermal resistance from junction and the mounting surfaces of the drain pins.

Recommended Operating Conditions

The ZXMS6004FF is optimized for use with µC operating from 3.3V and 5V supplies.

Characteristic

Symbol

Min

Max

Unit

Input Voltage Range

0

5.5

V

Ambient Temperature Range

-40

+125

°C

High Level Input Voltage for MOSFET to be On

3

5.5

V

Low Level Input Voltage for MOSFET to be Off

0

0.7

V

Peripheral Supply Voltage (Voltage to which Load is Referred)

0

36

V