DMHC3025LSDQ

Document number: DS37220 Rev. 1 - 2

7 of 9

www.diodes.com

May 2014

© Diodes Incorporated

DMHC3025LSDQ

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

0

-50 -25

0

25

50

75

100 125

150

T , JUNCTION TEMPERATURE ( C)

J

°

Figure 18 On-Resistance Variation with Temperature

V= -10V

I=

A

GS

D

-10

V=

5V

I=

A

GS

D

-4.

-5

0.5

1.0

1.5

2.0

2.5

3.0

0

-50 -25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

Figure 19 Gate Threshold Variation vs. Ambient Temperature

A

-I = 1mA

D

-I = 250µA

D

0

0.3

0.6

0.9

1.2

1.5

10

15

20

0

5

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 20 Diode Forward Voltage vs. Current

SD

T= -55 C

A

°

T= 25 C

A

°

T= 85 C

A

°

T= 125 C

A

°

T= 150 C

A

°

1,000

10

100

0

5

10

15

20

25

30

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 21 Typical Junction Capacitance

DS

f = 1MHz

Q , TOTAL GATE CHARGE (nC)

Figure 22 Gate-Charge Characteristics

g

0

2

4

6

8

10

V

= -15V

I= -6A

DS

D