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REF200AP 数据表(PDF) 1 Page - Texas Instruments |
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REF200AP 数据表(HTML) 1 Page - Texas Instruments |
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1 / 34 page ![]() I High I High Substrate Mirror In I Low I Low Mirror Out Mirror Common 1 2 1 2 8 7 6 5 1 2 3 4 100µA 100µA Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design REF200 SBVS020B – SEPTEMBER 2000 – REVISED JULY 2015 REF200 Dual Current Source and Current Sink 1 Features 3 Description The REF200 combines three circuit building-blocks 1 • Completely Floating: No Power Supply or Ground on a single monolithic chip: two 100-µA current Connections sources and a current mirror. The sections are • High Accuracy: 100 µA ±0.5% dielectrically isolated, making them completely • Low Temperature Coefficient: ±25 ppm/°C independent. Also, because the current sources are two-terminal devices, they can be used equally well • Wide Voltage Compliance: 2.5 V to 40 V as current sinks. The performance of each section is • Includes Current Mirror individually measured and laser-trimmed to achieve high accuracy at low cost. 2 Applications The sections can be pin-strapped for currents of 50 • Sensor Excitation µA, 100 µA, 200 µA, 300 µA, or 400 µA. External • Biasing Circuitry circuitry can obtain virtually any current. These and many other circuit techniques are shown in the • Offsetting Current Loops Application Information section of this data sheet. • Low Voltage References The REF200 is available in an SOIC package. • Charge-pump Circuitry • Hybrid Microcircuits Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) REF200 SOIC (8) 3.91 mm × 4.90 mm (1) For all available packages, see the package addendum at the end of the data sheet. Functional Block Diagram 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
类似零件编号 - REF200AP |
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类似说明 - REF200AP |
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