V23832-T2531-M101

V23832-R511-M101

Technical Data

Data Sheet

19

2003-11-19

The electro-optical characteristics described in the following tables are valid only for use

under the recommended operating conditions.

Transmitter Electrical Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Supply Current

1)

1)

Measured at the recommended case temperature of

T

10% and for

T

I

CC

400

450

mA

Power Consumption

1)

P

1.3

1.6

W

Data Rate per Channel

DR

500

2)

2)

Specified for CID worst case pattern (disparity 72) or any pattern with a smaller disparity. The minimum data

rate depends on the disparity of the used data pattern. For example, a regular clock signal (1-0 sequence) can

be transmitted down to a data rate as low as 1 Mbit/s.

1250

Mbit/s

LVCMOS Output Voltage Low

V

LVCMOSOL

0.4

V

LVCMOS Output Voltage High

V

LVCMOSOH

2.5

V

LVCMOS Input Current

High/Low

I

LVCMOSI

–100

100

µA

LVCMOS Output Current High

3)

3)

Source current.

I

LVCMOSOH

0.5

mA

LVCMOS Output Current Low

4)

4)

Sink current.

I

LVCMOSOL

4.0

mA

Data Differential

Input Impedance

5)

5)

Data input stage.

R

IN

80

100

120

Ω