APR34309CMPTRG1 datasheet(5/13 Pages) DIODES

5 / 13 page

APR34309C

Document number: DS37492 Rev. 5 - 2

5 of 13

www.diodes.com

June 2015

APR34309C

A Product Line of

Diodes Incorporated

Electrical Characteristics (@TA =+25°C, unless otherwise specified. Cont.)

MOSFET Static Characteristics

Parameters

Symbol

Conditions

Min

Typ

Max

Unit

Drain to Source Breakdown

Voltage

VDSS(BR)

VGS=0V, ID=0.25mA

–

100

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=0.25mA

0.7

1.3

Zero Gate Voltage Drain

Current

IDSS

VDS=50V, VGS=0V

–

µA

Gate to Source Leakage

Current

IGSS

VGS=10V, VDS=0V

–

±100

Drain to Source On-state

Resistance

RDS(ON)

VGS=4.5V, ID=3A

–

MOSFET Dynamic Characteristics

Parameters

Symbol

Conditions

Min

Typ

Max

Unit

Input Capacitance

Ciss

VGS=0V, VDS=25V, f=1MHz

–

1872

–

Output Capacitance

Coss

–

506

–

Reverse Transfer Capacitance

Crss

–

Gate to Source Charge

Qgs

VGS=0V to 10V, VDD=25V,

ID=15A

–

3.1

–

Gate to Drain Charge (Miller

Charger)

Qgd

–

4.8

–

Total Gate Charge

VGS=4.5V

–

Gate Resistance

–

1.8

–

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