AL9902

Document number: DS37878 Rev. 1 - 2

3 of 18

www.diodes.com

July 2015

© Diodes Incorporated

AL9902

Symbol

Parameter

Ratings

Unit

-0.5 to +520

V

Maximum CS Input Pin voltage Relative to GND

-0.3 to +0.45

V

Maximum LD Input Pin Voltage Relative to GND

V

Maximum PWM input Pin Voltage Relative to GND

V

Maximum MOSFET Drain Pin Voltage Relative to GND

-0.5 to +650

V

Maximum MOSFET Source Pin Voltage Relative to GND

V

Maximum MOSFET GATE pin Voltage Relative to GND

V

8.1

V

-

-

-

-

U-DFN6040-12 (derate 10mW/

C above +25C)

1,000

mW

Junction Temperature Range

+150

°C

Storage Temperature Range

-65 to +150

°C

ESD HBM

Human Body Model ESD Protection (Note 5)

2,000

V

Notes:

4. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional

operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

All voltages are with respect to Ground. Currents are positive into, negative out of the specified terminal.

5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling

and transporting these devices.

Characteristic

Symbol

Value

Units

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Steady

State

1.6

1

A

Pulsed Drain Current (Note 6)

3

A

0.8

A

22

mJ

Peak Diode Recovery

dv/dt

5

V/ns

Symbol

Parameter

Min

Max

Unit

Input DC Supply Voltage Range

20

500

V

Ambient Temperature Range

-40

+105

°C

Switch Pin Output Current

-

0.4

A

-

8.1

V

Pin PWM input Low Voltage

0

1

V

Pin PWM input High Voltage

2.4

Note:

6. when using the AL9902 in isolated LED lamps an auxiliary winding might be used.