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EM3586-RTR 数据表(PDF) 13 Page - Silicon Laboratories

部件名 EM3586-RTR
功能描述  High-Performance, Integrated ZigBee/802.15.4 System-on-Chip Family
PDF  59 Pages
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制造商  SILABS [Silicon Laboratories]
网页  http://www.silabs.com
标志 SILABS - Silicon Laboratories

EM3586-RTR 数据表(HTML) 13 Page - Silicon Laboratories

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EM358x
Rev 1.0
13
3. Electrical Specifications
3.1. Absolute Maximum Ratings
Table 3.1 lists the absolute maximum ratings for the EM358x.
3.2. Recommended Operating Conditions
Table 3.2 lists the rated operating conditions of the EM358x.
Table 3.1. Absolute Maximum Ratings
Parameter
Test Condition
Min
Max
Unit
Regulator input voltage (VDD_PADS)
–0.3
+3.6
V
Analog, Memory and Core voltage (VDD_24MHZ,
VDD_VCO, VDD_RF, VDD_IF, VDD_PADSA,
VDD_MEM, VDD_PRE, VDD_SYNTH, VDD_CORE)
–0.3
+2.0
V
Voltage on RF_P,N; RF_TX_ALT_P,N
–0.3
+3.6
V
RF Input Power
(for max level for correct packet reception see
Table 3.7)
RX signal into a
loss-less balun
+15
dBm
Voltage on any GPIO (PA[7:0], PB[7:0], PC[7:0]),
SWCLK, nRESET, VREG_OUT
–0.3
VDD_PADS
+0.3
V
Voltage on any GPIO pin (PA4, PA5, PB5, PB6, PB7,
PC1), when used as an input to the general purpose
ADC
–0.3
2.0
V
Voltage on OSCA, OSCB, NC
–0.3
VDD_PADSA
+0.3
V
Storage temperature
–40
+140
°C
Table 3.2. Operating Conditions
Parameter
Test Condition
Min
Typ
Max
Unit
Regulator input voltage (VDD_PADS)
2.1
3.6
V
Analog and memory input voltage
(VDD_24MHZ, VDD_VCO, VDD_RF, VDD_IF,
VDD_PADSA, VDD_MEM, VDD_PRE,
VDD_SYNTH)
1.7
1.8
1.9
V
Core input voltage when supplied from internal
regulator (VDD_CORE)
1.18
1.25
1.32
V
Operating temperature range
–40
+85
°C



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