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BCP29 数据表(PDF) 2 Page - Infineon Technologies AG

部件名 BCP29
功能描述  NPN Silicon Darlington Transistors
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

BCP29 数据表(HTML) 2 Page - Infineon Technologies AG

  BCP29 Datasheet HTML 1Page - Infineon Technologies AG BCP29 Datasheet HTML 2Page - Infineon Technologies AG BCP29 Datasheet HTML 3Page - Infineon Technologies AG BCP29 Datasheet HTML 4Page - Infineon Technologies AG BCP29 Datasheet HTML 5Page - Infineon Technologies AG  
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BCP29, BCP49
2
Nov-29-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
BCP29
BCP49
V(BR)CEO
30
60
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
BCP29
BCP49
V(BR)CBO
40
80
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
10
-
-
Collector cutoff current
VCB = 30 V, IE = 0
VCB = 60 V, IE = 0
BCP29
BCP49
ICBO
-
-
-
-
100
100
nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
VCB = 60 V, IE = 0 , TA = 150 °C
BCP29
BCP49
ICBO
-
-
-
-
10
10
µA
Emitter cutoff current
VEB = 5 V, IC = 0
IEBO
-
-
100
nA
DC current gain 1)
IC = 100 µA, VCE = 1 V
BCP29
BCP49
hFE
4000
2000
-
-
-
-
-
DC current gain 1)
IC = 10 mA, VCE = 5 V
BCP29
BCP49
hFE
10000
4000
-
-
-
-
DC current gain 1)
IC = 100 mA, VCE = 5 V
BCP29
BCP49
hFE
20000
10000
-
-
-
-
DC current gain 1)
IC = 500 mA, VCE = 5 V
BCP29
BCP49
hFE
4000
2000
-
-
-
-
1) Pulse test: t
≤ 300µs, D = 2%



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