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ADL5903ACPZN-R7 数据表(PDF) 16 Page - Analog Devices

部件名 ADL5903ACPZN-R7
功能描述  200 MHz to 6 GHz 35 dB TruPwr??Detector
PDF  20 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADL5903ACPZN-R7 数据表(HTML) 16 Page - Analog Devices

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ADL5903
Data Sheet
Rev. B | Page 16 of 20
The ENBL pin configures the device enable interface.
Connecting the ENBL pin to a logic high signal (2 V to 5.0 V)
enables the device, and connecting the pin to a logic low signal
(0 V to 0.6 V) disables the device. The exposed pad is internally
connected to GND and must be soldered to a low impedance
ground plane.
The output buffer of the ADL5903 features a PMOS common
source drive transistor and a resistive pull-down load. Under
typical operating conditions, the internal measurement range of
the device limits the output signal range to ≤2.2 V. Place a
100 Ω resistor on chip in series with the output to allow
additional filtering, if desired.
CHOOSING A VALUE FOR CRMS
CRMS provides the averaging function for the internal rms
computation. Using the minimum value for CRMS allows the
quickest response time to a pulsed waveform but leaves signifi-
cant output noise on the output voltage signal. However, a large
filter capacitor reduces output noise and improves the rms
measurement accuracy but at the expense of the response time.
In applications where the response time is not critical, place a
relatively large capacitor on the CRMS pin. In Figure 44, a value
of 0.1 µF is used. For most signal modulation schemes, this value
ensures excellent rms measurement compliance and low residual
output noise. There is no maximum capacitance limit for CRMS.
Figure 42 and Figure 43 show how output noise varies with CRMS
when the ADL5903 is driven by a single carrier W-CDMA
(Test Model TM1-64, peak envelope power = 10.56 dB, bandwidth
= 3.84 MHz) and an LTE signal (Test Model TM1-20, peak
envelope power = 11.58 dB, bandwidth = 20 MHz), respectively.
Figure 42 and Figure 43 also show how the value of CRMS affects
the response time. This is measured by applying an RF burst at
2.14 GHz at 0 dBm to the ADL5903. The 10% to 90% rise time
and 90% to 10% fall time are then measured.
Figure 42. Output Noise, Rise/Fall Times vs. CRMS Capacitance,
Single Carrier W-CDMA (Test Model TM1-64) at 2.14 GHz with PIN = 0 dBm
Figure 43. Output Noise, Rise/Fall Times vs. CRMS Capacitance,
Single Carrier LTE (Test Model TM1-20) at 2.14 GHz with PIN = 0 dBm
Figure 44. Basic Connections
0.1
1
10
100
1k
10k
100k
1M
0
100
200
300
400
500
600
700
0.1
1
10
100
1000
CRMS CAPACITANCE (nF)
OUTPUT NOISE (mV p-p)
10% TO 90% RISE TIME (µs)
90% to 10% FALL TIME (µs)
0.1
1
10
100
1k
10k
100k
1M
10M
100M
0
50
100
150
200
250
300
350
400
450
0.1
1
10
100
1000
CFLT4 (nF)
OUTPUT NOISE (mV p-p)
10% TO 90% RISE TIME (µs)
90% to 10% FALL TIME (µs)
RFIN
VPOS
VRMS
GND
ADL5903
INTERNAL
FILTERING
CRMS
ENBL
RMS CORE
BUFFER
100
Ω
1k
Ω
CREG
NIC
630pF
EP
4pF
0.1μF
4.02Ω
0.1μF
VPOS
RFIN
VRMS
VENBL
0.1μF
100pF
6
5
4
3
7
1
2
8



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