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ADL5903ACPZN-R7 数据表(PDF) 16 Page - Analog Devices |
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ADL5903ACPZN-R7 数据表(HTML) 16 Page - Analog Devices |
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16 / 20 page ![]() ADL5903 Data Sheet Rev. B | Page 16 of 20 The ENBL pin configures the device enable interface. Connecting the ENBL pin to a logic high signal (2 V to 5.0 V) enables the device, and connecting the pin to a logic low signal (0 V to 0.6 V) disables the device. The exposed pad is internally connected to GND and must be soldered to a low impedance ground plane. The output buffer of the ADL5903 features a PMOS common source drive transistor and a resistive pull-down load. Under typical operating conditions, the internal measurement range of the device limits the output signal range to ≤2.2 V. Place a 100 Ω resistor on chip in series with the output to allow additional filtering, if desired. CHOOSING A VALUE FOR CRMS CRMS provides the averaging function for the internal rms computation. Using the minimum value for CRMS allows the quickest response time to a pulsed waveform but leaves signifi- cant output noise on the output voltage signal. However, a large filter capacitor reduces output noise and improves the rms measurement accuracy but at the expense of the response time. In applications where the response time is not critical, place a relatively large capacitor on the CRMS pin. In Figure 44, a value of 0.1 µF is used. For most signal modulation schemes, this value ensures excellent rms measurement compliance and low residual output noise. There is no maximum capacitance limit for CRMS. Figure 42 and Figure 43 show how output noise varies with CRMS when the ADL5903 is driven by a single carrier W-CDMA (Test Model TM1-64, peak envelope power = 10.56 dB, bandwidth = 3.84 MHz) and an LTE signal (Test Model TM1-20, peak envelope power = 11.58 dB, bandwidth = 20 MHz), respectively. Figure 42 and Figure 43 also show how the value of CRMS affects the response time. This is measured by applying an RF burst at 2.14 GHz at 0 dBm to the ADL5903. The 10% to 90% rise time and 90% to 10% fall time are then measured. Figure 42. Output Noise, Rise/Fall Times vs. CRMS Capacitance, Single Carrier W-CDMA (Test Model TM1-64) at 2.14 GHz with PIN = 0 dBm Figure 43. Output Noise, Rise/Fall Times vs. CRMS Capacitance, Single Carrier LTE (Test Model TM1-20) at 2.14 GHz with PIN = 0 dBm Figure 44. Basic Connections 0.1 1 10 100 1k 10k 100k 1M 0 100 200 300 400 500 600 700 0.1 1 10 100 1000 CRMS CAPACITANCE (nF) OUTPUT NOISE (mV p-p) 10% TO 90% RISE TIME (µs) 90% to 10% FALL TIME (µs) 0.1 1 10 100 1k 10k 100k 1M 10M 100M 0 50 100 150 200 250 300 350 400 450 0.1 1 10 100 1000 CFLT4 (nF) OUTPUT NOISE (mV p-p) 10% TO 90% RISE TIME (µs) 90% to 10% FALL TIME (µs) RFIN VPOS VRMS GND ADL5903 INTERNAL FILTERING CRMS ENBL RMS CORE BUFFER 100 Ω 1k Ω CREG NIC 630pF EP 4pF 0.1μF 4.02Ω 0.1μF VPOS RFIN VRMS VENBL 0.1μF 100pF 6 5 4 3 7 1 2 8 |
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