BDP950 datasheet(1/4 Pages) INFINEON

部件名	BDP950

功能描述	PNP Silicon AF Power Transistors

PDF	4 Pages

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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1 / 4 page

BDP948, BDP950

1

Jul-06-2001

PNP Silicon AF Power Transistors

For AF driver and output stages

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary types: BDP947, BDP949 (NPN)

VPS05163

1

2

3

4

Type

Marking

Pin Configuration

Package

BDP948

BDP950

BDP 948

BDP 950

1 = B

2 = C

3 = E

4 = C

SOT223

Maximum Ratings

Parameter

Symbol

BDP948

BDP950

Unit

Collector-emitter voltage

VCEO

45

60

V

Collector-base voltage

VCBO

45

60

Emitter-base voltage

VEBO

5

DC collector current

IC

3

A

Peak collector current

ICM

5

Base current

IB

200

mA

Peak base current

IBM

500

Total power dissipation, TS = 99 °C

Ptot

3

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point1)

RthJS

17

K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

类似零件编号 - BDP950

制造商	部件名	数据表	功能描述
Siemens Semiconductor G...	BDP950	39Kb / 4P	PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
Infineon Technologies A...	BDP950	533Kb / 8P	PNP Silicon AF Power Transistors 2008-10-10
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	BDP950	537Kb / 8P	PNP Silicon AF Power Transistors 2011-10-05
	BDP950-E6327	537Kb / 8P	PNP Silicon AF Power Transistors 2011-10-05

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类似说明 - BDP950

制造商	部件名	数据表	功能描述
Infineon Technologies A...	BC856	218Kb / 8P	PNP Silicon AF Transistors Dec-11-2001
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