BFS17P datasheet(1/5 Pages) INFINEON

部件名	BFS17P

功能描述	NPN Silicon RF Transistor

PDF	5 Pages

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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BFS17P

Jul-12-2001

1

NPN Silicon RF Transistor

For broadband amplifiers up to 1 GHz at collector

currents from 1 mA to 20 mA

1

2

3

VPS05161

Type

Marking

Pin Configuration

Package

BFS17P

MCs

1 = B

2 = E

3 = C

SOT23

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

15

V

Collector-base voltage

VCBO

25

Emitter-base voltage

VEBO

2.5

Collector current

IC

25

mA

Peak collector current, f = 10 MHz

ICM

50

Total power dissipation

TS

55 °C 1)

Ptot

280

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point2)

RthJS

340

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

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BFS17P 数据表(PDF) 1 Page - Infineon Technologies AG

BFS17P 数据表(HTML) 1 Page - Infineon Technologies AG

类似零件编号 - BFS17P

类似说明 - BFS17P

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BFS17P 数据表(PDF) 1 Page - Infineon Technologies AG

BFS17P 数据表(HTML) 1 Page - Infineon Technologies AG

类似零件编号 - BFS17P

类似说明 - BFS17P

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