BFS482 datasheet(1/6 Pages) INFINEON

部件名	BFS482

功能描述	NPN Silicon RF Transistor

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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BFS482

1

Jun-27-2001

NPN Silicon RF Transistor

For low-noise. high-gain broadband amplifiers

at collector currents from 0.2 mA to 20 mA

fT = 8 GHz

F = 1.2 dB at 900 MHz

Two (galvanic) internal isolated

Transistors in one package

VPS05604

6

3

1

5

4

2

EHA07196

6

54

3

2

1

C1

E2

B2

C2

E1

B1

TR1

TR2

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFS482

RGs

1=B

2=E

3=C

4=B

5=E

6=C

SOT363

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

12

V

Collector-emitter voltage

VCES

20

Collector-base voltage

VCBO

20

Emitter-base voltage

VEBO

2

Collector current

IC

35

mA

Base current

IB

4

Total power dissipation

TS 81 °C 1)

Ptot

250

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point2)

RthJS

275

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

类似零件编号 - BFS482

制造商	部件名	数据表	功能描述
Siemens Semiconductor G...	BFS482	53Kb / 6P	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.)

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