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USB5537B 数据表(PDF) 65 Page - Microchip Technology |
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USB5537B 数据表(HTML) 65 Page - Microchip Technology |
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65 / 79 page ![]() 2012 - 2015 Microchip Technology Inc. DS00001682C-page 65 USB5537B 6.4 DC Electrical Characteristics Note 6-2 Output leakage is measured with the current pins in high impedance. Note 6-3 See USB 2.0 Specification 1. for USB DC electrical characteristics. TABLE 6-2: DC ELECTRICAL CHARACTERISTICS Parameter Symbol MIN TYP MAX Units Comments IS Type Input Buffer Low Input Level VILI 0.8 V TTL Levels High Input Level VIHI 2.0 V Hysteresis (IS only) VHYSI 420 mV I, IPU, IPD Type Input Buffer Low Input Level VILI 0.8 V TTL Levels High Input Level VIHI 2.0 V Pull Down PD 72 AV IN = 0 Pull Up PU 58 AV IN = VDD33 ICLK Input Buffer Low Input Level VILCK 0.3 V High Input Level VIHCK 0.8 V Input Leakage IIL -10 +10 AV IN = 0 to VDD33 Input Leakage (All I and IS buffers) Low Input Leakage IIL -10 +10 AV IN = 0 High Input Leakage IIH -10 +10 AV IN = VDD33 O12 Type Buffer Low Output Level VOL 0.4 V IOL = 12 mA @ VDD33 = 3.3 V High Output Level VOH VDD33 -0.4 VIOH = -12 mA @ VDD33 = 3.3 V Output Leakage IOL -10 +10 AV IN = 0 to VDD33 (Note 6-2) I/O12, I/O12PU & I/O12PD Type Buffer Low Output Level VOL 0.4 V IOL = 12 mA @ VDD33 = 3.3 V High Output Level VOH VDD33 -0.4 VIOH = -12 mA @ VDD33 = 3.3 V Output Leakage IOL -10 +10 AV IN = 0 to VDD33 (Note 6-2) Pull Down PD 72 A Pull Up PU 58 A IO-U (Note 6-3) |
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