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L6599AFD 数据表(PDF) 11 Page - STMicroelectronics |
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L6599AFD 数据表(HTML) 11 Page - STMicroelectronics |
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11 / 32 page ![]() DocID028175 Rev 3 11/32 L6599AF Electrical characteristics 32 Low-side gate driver (voltages referred to GND) VLVGL Output low voltage Isink = 200 mA 1.8 V VLVGH Output high voltage Isource = 5 mA 12.8 13.3 V Isourcepk Peak source current -0.3 A Isinkpk Peak sink current 0.7 A tf Fall time 30 ns tr Rise time 60 ns UVLO saturation Vcc = 0 to VccOn, Isink = 2 mA 1.1 V High-side gate driver (voltages referred to OUT) VLVGL Output low voltage Isink = 200 mA 1.8 V VLVGH Output high voltage Isource = 5 mA 12.8 13.3 V Isourcepk Peak source current -0.3 A Isinkpk Peak sink current 0.7 A tf Fall time 30 ns tr Rise time 60 ns HVG-OUT pull-down 25 k 1. Values tracking each other. Table 5. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
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